2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

{"title":"How to combine experiments and simulations to study thermo-mechanical issues in complex microelectronics assemblies","authors":"H. Frémont","doi":"10.1109/ESIME.2010.5464504","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464504","url":null,"abstract":"Due to the increase of microelectronic assemblies' complexity, the use of FEM simulations has become inescapable either for reliability prediction, or for virtual prototyping or qualification. This article will first describe the main reliability challenges linked to harsher environmental stresses, to new materials, to third dimension. Some examples taken from the current IMS lab studies, will illustrate the necessity of joint use of simulations and experiments.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130360769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Die attach interface property characterization as function of temperature using cohesive zone modeling method","authors":"Xiaosong Ma, G. Zhang, O. van der Sluis, K. Jansen, W. V. van Driel, L. Ernst, C. Regard, C. Gautier, H. Frémont","doi":"10.1109/ESIME.2010.5464533","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464533","url":null,"abstract":"Interface delamination is one of the most important issues in the microelectronic packaging industry. Silver filled die attach is a typical adhesive used between the die and copper die pad for its improved heat dissipation capacity. Delamination between die attach and die pad will severely impact the heat conduction and result in product failure. In order to predict this delamination, interface properties should be characterized. Tri-material, copper-die attach-EMC, samples are made according to the package processes. A four point bending test system is established in order to perform delamination tests at different temperatures using a universal tester Zwick/Roell Z005. In addition, a Keyence optical system is mounted to capture a series of pictures during the delamination processes. This will provide the delamination geometry information needed for determining the interface properties. Four point bending tests have been performed at room temperature, 40, 60, 85, and 150?C respectively. In addition pre conditioning sample are also tested at room temperature and 85?C respectively after 48 hours pre conditioned at 85?C/85%RH. Experiments show that the ?critical delamination load? decreases steadily with temperature increasing. Experiments also show moisture has no effects on the ?critical delamination load? compared with the dry samples tested at the same temperatures. This means that moisture has no effects on the interface toughness between copper and die attach. To quantify the interface properties, numerical simulations of the four point bending test have been performed by using a finite element model comprising cohesive zone elements which will describe the transient delamination process during the four point bending tests. Correspondently, the interface toughness decreases from 26.5J/m2 at room temperature to 1.9J/m2 at 150?C as calculated from the cohesive zone element model. These results show that temperature has a large effect on the interface toughness. By means of an extensive model parameter sensitivity study, combined with the measured delamination length in horizontal direction along the copper-die attach interface at room temperature critical opening value has been determined.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116529250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermo-mechanical simulation of BCB membrane thin-film package","authors":"S. Seok, Janggil Kim, N. Rolland, P. Rolland, S. Bouwstra","doi":"10.1109/ESIME.2010.5464577","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464577","url":null,"abstract":"This paper presents the investigation of the behaviour of BCB thin-film package based on the ANSYS FEM analysis. This kind of zero-level packaging has some stress effects on a packaged device causing deformation of chip and package cap itself. BCB cap deformation and device chip deformation as a function of its residual stress are significant due to the reliablity of the packaged devices. It was found that the deformation of the two parameters worsened as BCB residual stress increases. In addition, the BCB package deformation will be presented as a function of some physical parameters of the package such as BCB sealing ring width, BCB sealing ring height and BCB membrane height.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115084605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comparison of model order reduction methods used in different FE software tools","authors":"M. Jungwirth, D. Hofinger, H. Weinzierl","doi":"10.1109/ESIME.2010.5464612","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464612","url":null,"abstract":"A comparison between modelling and simulation methods in regard to model order reduction (MOR) in finite element (FE) simulation tools is presented. Two main software tools are taken into consideration: ANSYS Multiphysics 11 with its extension MOR for ANSYS 2.55 and COMSOL Multiphysics 3.5a with a model order reduction interface to MATLAB/Simulink. The results achived with both software packages are compared concerning simulation time and quality. The encounterd advantages and disadvantages are named. Starting with a short review on the different numerical methods used in MOR the implemented algorithms within ANSYS and COMSOL are tested on an electro-thermal problem. The limitations and the usability concerning model setup and parameterization are listed and compared. A step-by-step procedure using both tools is given and the results are compared in detail.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132876467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-scale numerical-experimental method to determine the size dependent elastic properties of bilayer silicon copper nanocantilevers using an electrostatic pull in experiment","authors":"R. Poelma, H. Sadeghian, S. Noijen, J. Zaal, G.Q. Zhang","doi":"10.1109/ESIME.2010.5464537","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464537","url":null,"abstract":"Thin metal films are widely used in modern electro mechanical systems. The need for more integrated functionality and minimization of material and energy consumption leads to miniaturization of these systems. As a consequence, materials are processed on the micro- and nanometer scale. On this scale, material properties become a function of size. To predict performance and reliability, knowledge on the size dependence of material properties is imperative. In this work the unknown size dependence of the copper Young's modulus is determined by electrostatic pull-in experiments performed on bilayer copper-silicon nanocantilevers. The size effect is also predicted with a multi-scale (MS) method. In this method atomistic simulations predict the bulk elastic and surface properties of mono-crystalline silicon (Si) and poly-crystalline copper (Cu). These results are combined to represent the bilayer nanocantilevers of the experiment in a continuum model. The model is verified by comparison with a well documented size effect of the effective Si Young's modulus. It is shown that the experimental method can be used for determining the Young's modulus of thin Cu films in the 10 to 50 nm range. Both the experimental results and the MS simulation results show that there is a strong size effect present in Si and Cu.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanical behaviour and fatigue of copper ribbons used as solar cell interconnectors","authors":"S. Wiese, R. Meier, F. Kraemer","doi":"10.1109/ESIME.2010.5464551","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464551","url":null,"abstract":"The soldering of solar cell strings is a critical step in the production of photovoltaic modules. Temperature induced stresses can cause cracking in the cells. During the soldering operation, the cell and the wires are heat up and expand. During the subsequent cooling phase they contract. The differential contraction between the Cu and the Si combined with thermal gradients, causes mechanical stress in the assembly. Moreover the lifetime of solar modules can be limited by the fatigue of the copper-ribbons. Since the front glass and the silicon cells have a significant difference in their coefficients of thermal expansion, temperature fluctuations are able to induce thermo-mechanical stresses in the photovoltaic module. The paper will present the results of the mechanical tests on copper materials. In order to give an explanation for the fatigue behaviour of the material, a correlation to the relevant microstructures will be given. Based on the investigated mechanical behaviour practical implications for proper handling of copper ribbons during solar module production processes will be concluded.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114549252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bond wire design for eXtreme Switch devices","authors":"T. Hauck, A. Kolbeck","doi":"10.1109/ESIME.2010.5464545","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464545","url":null,"abstract":"Freescale's third-generation eXtreme Switch devices set performance standards for automotive lighting. They are tailored to drive high-intensity discharge (HID) xenon, halogen and light-emitting diode (LED) lamps. For example, a halogen lamp draws high levels of current when first turned on, but much less once it has stabilized. The ICs therefor allow the lamps to draw high levels of current when needed at turn-on but less during operation. Hence, these devices have to withstand the event of an inrush current each time a lamp is switched on. Package and wire bond design have to consider the transient characteristics of Joule heating and heat transfer. The authors developed an approach for the current carrying analysis of bond wires in power packages. It is based on closed form solutions of the heat equation at single current pulse, repeated current pulses or arbitrary inrush current profiles. This paper focuses on the analysis of Joule heating in bond wires. We will solve the initial and boundary value problem for the Joule heating at an inrush current pulse. The solution will be validated with thermo-electric finite element simulation. We will then draw conclusions for the wire bond design.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130568988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison and characterization of a typical strain gage trace against another using the printed method","authors":"J. Quintero, R. Mancosu","doi":"10.1109/ESIME.2010.5464553","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464553","url":null,"abstract":"The measuring of deformation of a strain gage is quite diverse, requiring expertise in areas like mechanical engineering, metrology, design, materials, as well as knowledge of electronic circuits, in order to use them properly. A strain gage can help determine the mechanical properties of a material, which can be obtained in two ways, the first would be by destructive tests where the rupture of the material is reached, i.e., until its destruction. The second method would be by means of nondestructive testing used to determine physical properties of the material, as well as to detect any internal failure. The focus of this paper refers only to destructive mechanical testing, among which are: bending, and traction.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122052382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements","authors":"J. Leclech, D. Cassidy, M. Biet, F. Laruelle, M. Bettiati, J. Landesman","doi":"10.1109/ESIME.2010.5464589","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464589","url":null,"abstract":"GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our model. From there, the impacts of the material and the geometry have been highlighted, and an explanation of the longitudinal variation of the residual mechanical stress is proposed.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126123339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of freestanding thin Pt/W thermocouple by Joule heat welding","authors":"H. Tohmyoh, H. Takeda, M. Khan, M. Saka","doi":"10.1109/ESIME.2010.5464556","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464556","url":null,"abstract":"A very-thin Pt/W thermoelectric element is fabricated on a small chip. The Pt and W thin wires having the diameter of 5 µm are attached on a Cu electrode chip, and these are electrically isolated by air grove on the chip. The tips of both thin wires are welded by the technique of Joule heating. The other ends of wires are connected to a voltmeter. Temperature of the constructed electro-thermal circuit is controlled by flowing of the current through the circuit. The observed voltage is found to be proportional to the temperature difference between the dissimilar welding point and the chip (room temperature) which satisfies the Seebeck effect. The Seebeck coefficient is found to be about 0.2 µV/K. The temperature distribution of 5 µm Pt wire, where the constant current is flowing, is successfully measured by the fabricated very-thin Pt/W thermoelectric element.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"478 1-2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123433295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}