2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

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Simulation of particle levitation due to dielectrophoresis 介质电泳引起的粒子悬浮模拟
V. Rochus, S. Hannot, J. Golinval, D. Rixen
{"title":"Simulation of particle levitation due to dielectrophoresis","authors":"V. Rochus, S. Hannot, J. Golinval, D. Rixen","doi":"10.1109/ESIME.2010.5464526","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464526","url":null,"abstract":"The aim of the research is to model accurately dielectrophoresis using different numerical tools and compare them to experimental results. The dielectrophoresis phenomenon consists in the creation of electrostatic forces on nano or micro particles due to a gradient of electric field. The aim of such a setup is to control the motion of micro or nano particles for MEMS applications, for instance, for bioanalysis devices. To validate the numerical results, some prototypes have been fabricated at TU Delft. Using these simulations, a design of microstructure has been chosen to levitate Silica micro-particles. Experimental measurements have been performed and some characteristic behaviours of particle depending on the amplitude and the frequency of the applied voltage have been identified. The measurements are compared to the numerical simulation.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"404 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122943526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermo-mechanical design of a generic 0-level MEMS package using chip capping and Through Silicon Via's 通用0级MEMS封装的热机械设计,采用芯片封盖和Through Silicon Via
B. Vandevelde, R. Jansen, S. Bouwstra, N. Pham, B. Majeed, P. Limaye, E. Beyne, H. Tilmans
{"title":"Thermo-mechanical design of a generic 0-level MEMS package using chip capping and Through Silicon Via's","authors":"B. Vandevelde, R. Jansen, S. Bouwstra, N. Pham, B. Majeed, P. Limaye, E. Beyne, H. Tilmans","doi":"10.1109/ESIME.2010.5464539","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464539","url":null,"abstract":"This paper describes the thermo-mechanical design of an advanced zero-level capping technology used for packaging of a MEMS die. The package approach uses Intermetallic Compound (IMC) bonding to seal the MEMS die with a cap, and uses Through Silicon Via's (TSV) to provide the electrical connections from the MEMS die to the second level substrate (LTCC or PCB). Advanced FEM based thermo-mechanical simulations are performed to estimate the impact of processing and temperature cycling on the mechanical stresses and deformations induced in the structure. Special focus goes to the rigid CuSn IMC bond, the copper TSV using a polymer dielectric and the cap deflection under a pressure of 1 bar (vacuum inside) and 90 bar (simulating overmoulding). Finally, the impact of assembling the MEMS package on an LTCC substrate and an FR4 printed circuit board with CuSn, respectively solder connections is investigated with respect to the package reliability, the cap deflection and the strain and anchor rotation at location of the MEMS.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126733163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Molecular modelling of microelectronic packaging materials - basic thermo-mechanical property estimation of a 3D-crosslinked epoxy / SiO2 interface 微电子封装材料的分子建模。3d交联环氧树脂/ SiO2界面的基本热机械性能估计
O. Holck, E. Dermitzaki, B. Wunderle, J. Bauer, B. Michel
{"title":"Molecular modelling of microelectronic packaging materials - basic thermo-mechanical property estimation of a 3D-crosslinked epoxy / SiO2 interface","authors":"O. Holck, E. Dermitzaki, B. Wunderle, J. Bauer, B. Michel","doi":"10.1109/ESIME.2010.5464521","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464521","url":null,"abstract":"In this work we present a procedure for the construction of 3D networked epoxy moulding compounds and an estimation of basic thermodynamic properties by molecular dynamics simulations. Our investigations present part of general trend to extend failure analysis, reliability assessment and the development of packaging materials from the conventional discrete usage of simulation techniques to a more holistic approach of an interconnected multimethods-procedure, enabling bottom-up simulation of complex microsystems. Within that framework, the task at hand for detailed atomistic molecular modelling is to develop practical methods in order to take materials development as well as materials failure analysis to the nanoscale level. This paper reports a cross linking scheme for the construction of three dimensionally cross linked simulation packages and presents a first property analysis of an industry near moulding compound material. First models and results are presented of model packages of ideal epoxy/silicon-dioxide interfaces.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127522618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis of the performance reduction of axial fans in close proximity to EMC screens 靠近电磁兼容屏的轴流风机性能降低分析
R. Antón, A. Bengoechea, Y. Masip, A. Rivas, J. C. Ramos, G. S. Larraona
{"title":"Analysis of the performance reduction of axial fans in close proximity to EMC screens","authors":"R. Antón, A. Bengoechea, Y. Masip, A. Rivas, J. C. Ramos, G. S. Larraona","doi":"10.1109/ESIME.2010.5464583","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464583","url":null,"abstract":"The performance of axial fans in close proximity to EMC screens has been analyzed by means of an experimental parametric study. The following geometrical parameters have been studied: the hub-to-tip ratio, the ratio between fan thickness and fan diameter, the porosity and the thickness of the perforated plate and finally the distance of the perforated plate to the inlet and the outlet of the fan. The screen porosity has been found to be the most important parameter. The distance between the screen and the fan is significant to a certain extent if the screen is placed at the inlet of the fan, otherwise the distance is of no importance.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123985385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of the mechanical properties of underfill on the local deformation and residual stress in a chip mounted by area-arrayed flip chip structures 下填土力学性能对倒装芯片局部变形和残余应力的影响
K. Nakahira, Yuki Sato, H. Kishi, K. Suzuki, H. Miura
{"title":"Effect of the mechanical properties of underfill on the local deformation and residual stress in a chip mounted by area-arrayed flip chip structures","authors":"K. Nakahira, Yuki Sato, H. Kishi, K. Suzuki, H. Miura","doi":"10.1109/ESIME.2010.5464598","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464598","url":null,"abstract":"Since the thickness of the stacked silicon chips in 3D integration has been thinned to less than 100 µm, the local thermal deformation of the chips has increased drastically because of the decrease of the flexural rigidity of the thinned chips. The clear periodic thermal deformation and thus, the thermal residual stress distribution appear in the stacked chips due to the periodic alignment of metallic bumps, and they deteriorate the reliability of products. In this paper, the dominant structural factors of the local deformation of a silicon chip are discussed quantitatively based on the results of a three-dimensional finite element analysis and the measurement of the local deformation and residual stress in a chip using strain sensor chips and interference microscopy.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124038471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A correlation between thermo-mechanical finite elements tool with electro-thermal finite elements tool: towards an electro-mechanical finite elements modeling for IGBT used in power assemblies 热机械有限元工具与电热有限元工具的相关性:面向电力组件中使用的IGBT的机电有限元建模
Y. Belmehdi, S. Azzopardi, E. Woirgard, J. Delétage, I. Favre
{"title":"A correlation between thermo-mechanical finite elements tool with electro-thermal finite elements tool: towards an electro-mechanical finite elements modeling for IGBT used in power assemblies","authors":"Y. Belmehdi, S. Azzopardi, E. Woirgard, J. Delétage, I. Favre","doi":"10.1109/ESIME.2010.5464606","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464606","url":null,"abstract":"Our objective is to establish a connection between finite elements mechanical simulations using ANSYS software applied on a power module including a silicone die with finite elements electrical simulations using TCAD SENTAURUS software applied on a silicone power transistor, such as a Planar Gate Punch Through Insulated Gate Bipolar Transistor (IGBT). In this paper, the thermo-mechanical finite elements software is used to obtained the mechanical stress distribution within the silicone die under the four points bending configuration. Then, the mechanical stress is implemented in the semiconductor device simulator to obtain three static configurations (output characteristics, forward transfer and breakdown voltage). Simulation results show the same tendency as experiments and illustrate that whereas the mechanical stress has low effect on breakdown voltage, the forward current as well as the transconductance are strongly affected by external mechanical stress depending on its level, direction and nature (compressive or tensile).","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115411827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermo-mechanical simulations of LTCC packages for RF MEMS applications 用于RF MEMS应用的LTCC封装的热力学模拟
J. Lenkkeri, E. Juntunen, M. Lahti, S. Bouwstra
{"title":"Thermo-mechanical simulations of LTCC packages for RF MEMS applications","authors":"J. Lenkkeri, E. Juntunen, M. Lahti, S. Bouwstra","doi":"10.1109/ESIME.2010.5464591","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464591","url":null,"abstract":"Stresses and strains in assemblies of a silicon-based MEMS chip and in an LTCC package have been simulated using Comsol Multiphysics simulation software. The simulated structures included the MEMS chip either wire bonded or flip-chip bonded into a cavity in a LTCC substrate and an LTCC lid sealed on top of the cavity. For die bonding of the MEMS chip and for sealing of the lid AuSn solder material was assumed and for the flip-chip joining of the MEMS chip Au-bumps and thermo compression bonding process were assumed. Both 2D and 3D simulations were made for a temperature range between 218 K and 393 K, for pressures up to 100 bar, for shear force applied either to chip or lid edge and for heat dissipation of 1 W applied to the chip. The effects of 2nd level packaging were also studied. The simulations show that the strains at the surface of the MEMS components are larger in the flip-chip type chip compared with wire bonded chip. For thermal management of the LTCC type package thermal vias through the LTCC substrate will be necessary. Several possible ways for minimizing the strains in the MEMS component are discussed in this article.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127052235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
High temperature storage influence on molding compound properties 高温贮存对成型复合材料性能的影响
J. de Vreugd, K. Jansen, L. Ernst, C. Bohm, R. Pufall
{"title":"High temperature storage influence on molding compound properties","authors":"J. de Vreugd, K. Jansen, L. Ernst, C. Bohm, R. Pufall","doi":"10.1109/ESIME.2010.5464541","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464541","url":null,"abstract":"An electronic device cannot perform its designed functions until it is packaged such that it is interconnected with the rest of the system and protected. As an encapsulation material, thermosetting polymers are widely used. It is well known that properties of polymer-based composites like molding compounds are highly affected by the influence of temperature, relative humidity and degree of conversion. The effect of above mentioned internal and external circumstances are investigated extensively in the past. Surprisingly the effect of high temperature storage on the mechanical properties is scarcely studied. From literatures research it is concluded that high temperature storage and postcure treatments increases the glass transition temperature. Also a weight loss during high temperature storage is reported [1], [2].","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122516956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Exemplified calculation of stress migration in a 90nm node via structure 举例计算了90nm节点通过结构的应力迁移
K. Weide-Zaage
{"title":"Exemplified calculation of stress migration in a 90nm node via structure","authors":"K. Weide-Zaage","doi":"10.1109/ESIME.2010.5464542","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464542","url":null,"abstract":"An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121582625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Thermomechanical characterization of electronic components 电子元件的热机械特性
Sana Ben Khlifa, N. Bonfoh, P. Lipinski, M. Fendler, S. Bernabé, H. Ribot
{"title":"Thermomechanical characterization of electronic components","authors":"Sana Ben Khlifa, N. Bonfoh, P. Lipinski, M. Fendler, S. Bernabé, H. Ribot","doi":"10.1109/ESIME.2010.5464592","DOIUrl":"https://doi.org/10.1109/ESIME.2010.5464592","url":null,"abstract":"The main objective of this study is to validate the thermomechanical properties of materials used in some electronic components. The improved performance of HgCdTe infrared focal plane arrays requires reliability of the assembly at low temperatures down to 77K. Unfortunately, the thermomechanical behavior of most materials of these components remains to be clarified, particularly in a cryogenic environment. The present investigation is a part of a global study that aims to analyze the reliability of some electronic assembly, through numerical simulations combined with experimental measures. The relevance of this numerical modelling strongly depends on a precise characterization of the thermo-mechanical behavior of specific materials involved in the considered assemblies. Thus, through numerical simulations of a model of electronic chip, we determine the thermal and mechanical properties of materials such as indium, silicon, fused silica, by comparing these simulations results with the experimental measurements carried out on these same models of chips. This study enables us to have a complete database of the thermomechanical behavior of materials studied for the range of operating temperatures.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123465885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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