举例计算了90nm节点通过结构的应力迁移

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI:10.1109/ESIME.2010.5464542

K. Weide-Zaage

{"title":"举例计算了90nm节点通过结构的应力迁移","authors":"K. Weide-Zaage","doi":"10.1109/ESIME.2010.5464542","DOIUrl":null,"url":null,"abstract":"An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.","PeriodicalId":152004,"journal":{"name":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Exemplified calculation of stress migration in a 90nm node via structure\",\"authors\":\"K. Weide-Zaage\",\"doi\":\"10.1109/ESIME.2010.5464542\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.\",\"PeriodicalId\":152004,\"journal\":{\"name\":\"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2010.5464542\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESIME.2010.5464542","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

对节点尺寸为90nm的宽、窄线通孔结构进行了迁移效应特别是应力迁移的算例计算。在模拟中考虑了过程引起的应力。第一次使用用户程序确定质量通量散度，该程序允许直接计算质量通量散度方程中的divgrad(x)项。所调查的案例表明，模拟与文献中迁移效应分离计算的测量结果有很好的相关性。用无应力状态的参考温度来计算应力分布和质量通量散度分布是不够的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Exemplified calculation of stress migration in a 90nm node via structure

An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)

自引率

0.00%

发文量