用模拟和光致发光偏振度测量的方法研究gaas基激光二极管的键合诱导应力

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI:10.1109/ESIME.2010.5464589

J. Leclech, D. Cassidy, M. Biet, F. Laruelle, M. Bettiati, J. Landesman

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引用次数: 2

摘要

采用模拟和光致发光偏振度(DoP)测量的方法研究了gaas基单模激光二极管的键合诱导应力。为了确定这些参数对诱发应力的影响，对不同的下垫材料和不同的几何形状进行了建模。仿真结果与DoP测量值的比较表明了模型的精度。由此，强调了材料和几何形状的影响，并提出了残余机械应力纵向变化的解释。

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GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements

GaAs-based single-mode laser diode bonding-induced stress has been investigated by the means of both simulation and Degree of Polarization of photoluminescence (DoP) measurements. This has been done for different submount materials, and different geometries have been modeled in order to determine the impact of these parameters on the induced stress. The comparison of simulation results and DoP measurements shows the degree of accuracy of our model. From there, the impacts of the material and the geometry have been highlighted, and an explanation of the longitudinal variation of the residual mechanical stress is proposed.

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2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)

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