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2015 International Symposium on Next-Generation Electronics (ISNE)最新文献

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Narrowband reflection from integrated Bragg gratings with corrugations on long side structures 长边结构上带波纹的集成布拉格光栅窄带反射
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132003
Keng-hsien Lin, Chong-Jia Wu, Y. Hung, Cheng-Yu Wang, Yung-Jui Chen
{"title":"Narrowband reflection from integrated Bragg gratings with corrugations on long side structures","authors":"Keng-hsien Lin, Chong-Jia Wu, Y. Hung, Cheng-Yu Wang, Yung-Jui Chen","doi":"10.1109/ISNE.2015.7132003","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132003","url":null,"abstract":"An alternative approach to realize CMOS-compatible integrated Bragg gratings is proposed and implemented in this work to allow flexible control of the reflection response. To enable weak grating coupling strength in fully-etched waveguide, we employ corrugations on long side waveguides in the proposed cladding-modulated waveguides, leading to a measured reflection bandwidth of only 0.44 nm and a peak reflectivity of 96%. This grating design is relatively insensitive to the grating width variation, so within 1nm Bragg wavelength variation is also observed.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"64 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123186312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies VT掺杂能量下多n通道finfet的热应力探测电学性能
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131980
Mu-Chun Wang, Jian-Liang Lin, Shao-Syuan Syu, W. Liao, W. Lan, Shea-Jue Wang
{"title":"Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies","authors":"Mu-Chun Wang, Jian-Liang Lin, Shao-Syuan Syu, W. Liao, W. Lan, Shea-Jue Wang","doi":"10.1109/ISNE.2015.7131980","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131980","url":null,"abstract":"Higher threshold-voltage (V<sub>T</sub>) doping energy provides the deeper influence to channel controllability. For drive current (I<sub>DS</sub>) consideration, the higher one demonstrates the larger I<sub>DS</sub> value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and the drop ratio at higher doping energy process is converse at higher temperature stress.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114794447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A gate-oxide-breakdown antifuse OTP ROM array based on TSMC 90nm process 一种基于台积电90nm工艺的栅极氧化击穿抗熔丝OTP ROM阵列
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132015
Zicheng Liu, Ruifeng Zheng, Jianwei Sun
{"title":"A gate-oxide-breakdown antifuse OTP ROM array based on TSMC 90nm process","authors":"Zicheng Liu, Ruifeng Zheng, Jianwei Sun","doi":"10.1109/ISNE.2015.7132015","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132015","url":null,"abstract":"A one-time programmable (OTP) antifuse ROM array using MOSFET gate oxide breakdown, which is designed and fabricated under TSMC 90nm standard CMOS process, is presented in this paper. The breakdown voltage and breakdown time are measured. The schematic design of three-transistor antifuse OTP ROM array is exhibited. SPI bus is used to decrease the number of chip pads in practice. The experimental result shows that write & read function can be realized successfully.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"71 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117148718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of an optical flow switch based on LCoS technologies 基于LCoS技术的光流开关设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131971
Yuh-Jiuh Cheng, Yhi Shiau, Shu-Ying Cheng
{"title":"Design of an optical flow switch based on LCoS technologies","authors":"Yuh-Jiuh Cheng, Yhi Shiau, Shu-Ying Cheng","doi":"10.1109/ISNE.2015.7131971","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131971","url":null,"abstract":"In this paper, an optical flow switch (OFS) based on LCoS (Liquid Crystal on Silicon) technologies is proposed. The proposed OFS with input buffers can quickly transfer the big data to the output ports and the main purpose of OFS is to reduce the number of wavelength reflections. The all-optical content delivery network is composed of the optical flow switches for a large amount of audio and video data transmissions in the future.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129748712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Frequency stability measurement of laser by using two independent tunable lasers 用两个独立可调谐激光器测量激光的频率稳定性
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132001
Weiyu Wang, Jianguo Liu, W. Sun, Wenting Wang, N. Zhu
{"title":"Frequency stability measurement of laser by using two independent tunable lasers","authors":"Weiyu Wang, Jianguo Liu, W. Sun, Wenting Wang, N. Zhu","doi":"10.1109/ISNE.2015.7132001","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132001","url":null,"abstract":"We demonstrate a novel scheme to measure frequency stability of laser by using two independent tunable lasers with the exactly same parameters. Due to the square relationship between the Allan variance of the beating tone and two laser sources, the frequency stability of the measured laser can be obtained through two steps. Thus, an optical reference source which is significantly more stable than the laser under test can eliminate the need. The frequency stability of the laser is 2.96×10-9.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125536136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improve efficiency by surface treatment of top-emission flexible polymer light-emitting diode 通过对柔性聚合物发光二极管的表面处理，提高了发光效率
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131974
Ming-Lung Tu, Y. Su, Ruei-Tang Chen, Shin-Her Yu
{"title":"Improve efficiency by surface treatment of top-emission flexible polymer light-emitting diode","authors":"Ming-Lung Tu, Y. Su, Ruei-Tang Chen, Shin-Her Yu","doi":"10.1109/ISNE.2015.7131974","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131974","url":null,"abstract":"A yellow flexible top-emission polymer light-emitting diode (TOPLED) was fabricated on cyclic olefin copolymer (COC) substrate. The light-emitting material was phenyl-substituted (p-phenylene vinylene) (HYPPV) polymer. The structure of TOPLED was COC/Ag/PEDOT:PSS/HYPPV/Ca/Ag. The Ag on COC was used as anode and the Ag on Ca was used as cathode. After anode Ag was thermally evaporated on COC substrate, the ultraviolet-ozone (UV-ozone) was treated on surface of anode Ag. The treating time was varied. The optimal treated time was 3 minutes. The luminous efficiency of TOPLED increased 42% with 3 minutes UV-ozone treatment.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127499973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable Yb-doped fiber laser with single longitudinal mode (SLM) operation based on subring cavities 基于亚带腔的单纵模可调谐掺镱光纤激光器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131952
Y. L. Yu, Y. Lai, S. Liaw, W. Hsu, M. Shih, N. Chen
{"title":"Tunable Yb-doped fiber laser with single longitudinal mode (SLM) operation based on subring cavities","authors":"Y. L. Yu, Y. Lai, S. Liaw, W. Hsu, M. Shih, N. Chen","doi":"10.1109/ISNE.2015.7131952","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131952","url":null,"abstract":"1064 nm band Ytterbium doped fiber (YDF) laser is proposed and investigated. Using 70 cm YDF and FBG parameter optimization reflectivity and pumping scheme, a high slope efficiency of 50% and low threshold power are obtained. The power variation is less than 0.1 dB in 13 nm tuning span. Using the Vernier effect, near single frequency lasing is realized for the whole tuning range in 2dBm output power.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128178727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An 8×1k SPAD detector with TDI in 0.13μm CMOS technology 基于0.13μm CMOS技术的TDI 8×1k SPAD探测器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131959
Lixia Dong, Dong Wu, Jun Zhou
{"title":"An 8×1k SPAD detector with TDI in 0.13μm CMOS technology","authors":"Lixia Dong, Dong Wu, Jun Zhou","doi":"10.1109/ISNE.2015.7131959","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131959","url":null,"abstract":"A wider variety of practical applications employ single photon avalanche diode (SPAD) operating in Geiger mode to detect the extremely weak optical signal due to many advantages, such as higher avalanche gain and faster response speed. In this paper, we report a high-performance linear scan SPAD detector with time delay integration (TDI) to enhance the dynamic range and signal to noise ratio (SNR). The detector is fabricated in 0.13μm CMOS technology and it comprises an array of 8×1k SPAD pixels, quenching circuits, readout modules and other necessary peripheral circuits.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131960911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Depth-based hand gesture recognition using hand movements and defects 基于深度的手势识别利用手部运动和缺陷
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132005
Wei-Lun Chen, Chih-Hung Wu, C. Lin
{"title":"Depth-based hand gesture recognition using hand movements and defects","authors":"Wei-Lun Chen, Chih-Hung Wu, C. Lin","doi":"10.1109/ISNE.2015.7132005","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132005","url":null,"abstract":"In this paper, we proposed a dynamic hand gesture recognition system by using only the depth information. The proposed system can recognize twelve different dynamic hand gestures, including swipes, scales, push, wave, rotates, circle, and drag. First, the background subtraction is used to remove the unnecessary information, and the depth information of main user can be obtained. Furthermore, hand position can be tracked, and the region of hand is extracted as an adaptive square. Once the region of hand is obtained, the hand parameters are obtained by calculating the depth information of hand region. The proposed system can recognize dynamic hand gesture by using the hand parameters. In the experiment, the performance of the proposed system is verified by two different people at 2 different depths, and both right and left hands are verified. The experimental result show that the proposed system can recognize the dynamic hand gestures with an average recognition rate of 90.08%.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"531 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133236557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A study of subthreshold behavior of short-channel junctionless cylindrical surrounding-gate MOSFETs from an electrostatic potential viewpoint 从静电电位的角度研究短沟道无结圆柱形围栅mosfet的亚阈值行为
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131955
Chunsheng Jiang, R. Liang, Jing Wang, Jun Xu
{"title":"A study of subthreshold behavior of short-channel junctionless cylindrical surrounding-gate MOSFETs from an electrostatic potential viewpoint","authors":"Chunsheng Jiang, R. Liang, Jing Wang, Jun Xu","doi":"10.1109/ISNE.2015.7131955","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131955","url":null,"abstract":"An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green's function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"340 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133286919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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