Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies

Abstract

Higher threshold-voltage (V_T) doping energy provides the deeper influence to channel controllability. For drive current (I_DS) consideration, the higher one demonstrates the larger I_DS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and the drop ratio at higher doping energy process is converse at higher temperature stress.