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2015 International Symposium on Next-Generation Electronics (ISNE)最新文献

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Design of a parallel-operation-oriented FPGA 面向并行操作的FPGA设计
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132021
Minoru Watanabe
{"title":"Design of a parallel-operation-oriented FPGA","authors":"Minoru Watanabe","doi":"10.1109/ISNE.2015.7132021","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132021","url":null,"abstract":"Recently, studies of acceleration of software operations on a processor have been executed aggressively using Field Programmable Gate Arrays (FPGAs). However, currently available FPGA architecture presents waste under a parallel operation in terms of configuration memory because the same configuration context corresponding to same-function modules must be programmed onto numerous parts of configuration memory. This paper therefore presents a proposal for a parallel-operation-oriented FPGA architecture including a shared common configuration memory. In this research, a parallel-operation-oriented FPGA with four programmable gate arrays sharing a common configuration memory has been designed using a 0.18 μm CMOS process technology. The advantage of the parallel-operation-oriented FPGA is clarified and a design technique to achieve a high-performance parallel-operation-oriented FPGA is discussed.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130217389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Reverse recovery time reworking of fast recovery diodes for industrial production 工业生产用快速恢复二极管的反向恢复时间返工
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132020
W. Itthikusumarn, W. Jakphet, W. Titiroongruang
{"title":"Reverse recovery time reworking of fast recovery diodes for industrial production","authors":"W. Itthikusumarn, W. Jakphet, W. Titiroongruang","doi":"10.1109/ISNE.2015.7132020","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132020","url":null,"abstract":"For industrial field, cost is one of the most important factors. Especially discrete devices like a fast recovery diodes which are produced by complicated processes. In case of over trr defect, reworking is required to limit the cost which is increased. Owing to simple applied to finished products, electron beam irradiation is presented to rework them. This study have exposed the irradiation to finished fast diodes which high trr (300-400 ns) and considered effects of irradiation on fast diodes after exposed. The result of experiment shows irradiation can reduce trr after exposed depend on irradiation doses from average trr 350ns to 100, 60, 50, 40 and 35ns, for irradiation dose 50, 100, 150, 200, 250 and 300kGy respectively. Notwithstanding fast diodes after exposed were degraded by irradiation. Forward voltage is added double at 50kGy and more in larger doses and reversed leakage current is also slightly increased but did not affect to breakdown voltage.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114675702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture 集成一二极管一电阻(1D-1R)结构中基于siox的电阻开关存储器(ReRAM)的研究
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131996
Yao‐Feng Chang, B. Fowler, F. Zhou, Jack C. Lee
{"title":"Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture","authors":"Yao‐Feng Chang, B. Fowler, F. Zhou, Jack C. Lee","doi":"10.1109/ISNE.2015.7131996","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131996","url":null,"abstract":"In this work, one diode-one resistor (1D-1R) SiOx-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 106 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 106 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125460666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation and demonstration of MOS-structure silicon solar cell using ITO/Al2O3/TiO2 antireflective coating 采用ITO/Al2O3/TiO2增透涂层的mos结构硅太阳电池的仿真与演示
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132011
Zhong-Fu Hou, W. Ho, C. Yeh, Ruei-Siang Sue, Yu-Tang Shen, C. Hu, Y. Deng
{"title":"Simulation and demonstration of MOS-structure silicon solar cell using ITO/Al2O3/TiO2 antireflective coating","authors":"Zhong-Fu Hou, W. Ho, C. Yeh, Ruei-Siang Sue, Yu-Tang Shen, C. Hu, Y. Deng","doi":"10.1109/ISNE.2015.7132011","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132011","url":null,"abstract":"Performance enhancement of the p-n junction silicon solar cells with ITO/Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> antireflective coating is experimentally demonstrated. The reflectivity of the ITO/Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> layer configuration with various thicknesses on Si wafer are simulated and characterized. Optical reflection and external quantum efficiency of the proposed MOS-structure Si solar cells are measured and compared with the changing in oxide-film thickness. An impressive efficiency enhancement of 42.39 % was obtained for the cell consisted of a 50-nm-ITO/5-nm-Al<sub>2</sub>O<sub>3</sub>/25-nm-TiO<sub>2</sub> antireflection coating, compared to the reference cells.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127273128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A tunable data hiding scheme for CABAC in H.264/AVC video streams H.264/AVC视频流中CABAC可调数据隐藏方案
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132004
Wei-Siang Wang, Yih-Chuan Lin
{"title":"A tunable data hiding scheme for CABAC in H.264/AVC video streams","authors":"Wei-Siang Wang, Yih-Chuan Lin","doi":"10.1109/ISNE.2015.7132004","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132004","url":null,"abstract":"In this paper, a new method for tunable data hiding in H.264/AVC streams is presented. In order to provide the greatest flexibility for users with varying requirement, a simple control operation for capacity of hiding secret message is proposed. One group of coefficients chosen from specific macroblock is used to accommodate the secret message bits. Based on experimental results, the proposed scheme has been verified that a higher hiding capacity can be obtained at lower degradation on the bitrate and peak signal-to-noise ratio.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"531 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123454476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation of charge collection probability in GaAs and Si solar cells from external quantum efficiency 基于外部量子效率的砷化镓和硅太阳能电池电荷收集概率模拟
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132009
Shih-Li Lin, Hung-Ruei Tseng, S. Hsu, Yin-Han Chen, C. Lin
{"title":"Simulation of charge collection probability in GaAs and Si solar cells from external quantum efficiency","authors":"Shih-Li Lin, Hung-Ruei Tseng, S. Hsu, Yin-Han Chen, C. Lin","doi":"10.1109/ISNE.2015.7132009","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132009","url":null,"abstract":"The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131955629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Spin-based devices for future microelectronics 未来微电子学的自旋器件
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132030
V. Sverdlov, S. Selberherr
{"title":"Spin-based devices for future microelectronics","authors":"V. Sverdlov, S. Selberherr","doi":"10.1109/ISNE.2015.7132030","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132030","url":null,"abstract":"With CMOS technology rapidly approaching its scaling limits, the electron spin attracts much attention as an alternative degree of freedom for low-power applications. Silicon is suited for spin-driven applications because of its long spin lifetime. In confined electron systems the spin lifetime can be increased significantly by uniaxial stress. However, despite the many achievements, an experimental demonstration of a spin-based field effect transistor (SpinFET) is pending due to low spin injection efficiency and difficulties to manipulate spins electrically. This motivates researchers to look into CMOS-compatible spin-driven devices. Spin-transfer torque MRAM is fast, compact, and non-volatile; however, the high current for magnetization switching is a challenge. For in-plane magnetization a substantial reduction of the current is achieved, when the free layer is composed of two parts. In addition to information storing, the same MRAM cells can also be used for information processing, paving a path towards non-volatile logic-in-memory architectures.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127094690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical study of indium doped magnesium zinc oxide by spray pyrolysis 喷雾热解法制备掺铟氧化镁的电学研究
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131975
Tzu-Yang Lin, WeiHsuan Hsu, ChunYi Lee, ShengChung Huang, YuXuan Ding, W. Lan, M. Shih
{"title":"Electrical study of indium doped magnesium zinc oxide by spray pyrolysis","authors":"Tzu-Yang Lin, WeiHsuan Hsu, ChunYi Lee, ShengChung Huang, YuXuan Ding, W. Lan, M. Shih","doi":"10.1109/ISNE.2015.7131975","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131975","url":null,"abstract":"The undoped and indium doped magnesium zinc oxide was prepared by spray pyrolysis with magnesium nitrate, zinc acetate and indium nitrate precursors. For undoped thin film, the photolumescence spectrum shows the blue shift behavior with the increasing of deposition temperature. The near band edge emission with peak wavelength 365nm for magnesium znic oxide can be observed. With the increasing of indium nitrate, the film resistivity, concentration and mobility were measured. The N-type conduction with concentration around 8×1018cm-3 can be characterized.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128848274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic reconfigurable AWG-based encryption and decryption with integrated chaos/M-sequence mapping algorithm for secure transmission 基于混沌/ m序列映射算法的动态可重构awg加解密安全传输
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132022
Yao-Tang Chang, Chung-Wei Tsailin, Yen-Chung Huang
{"title":"Dynamic reconfigurable AWG-based encryption and decryption with integrated chaos/M-sequence mapping algorithm for secure transmission","authors":"Yao-Tang Chang, Chung-Wei Tsailin, Yen-Chung Huang","doi":"10.1109/ISNE.2015.7132022","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132022","url":null,"abstract":"In order to enhance the confidentiality of AWG-based optical code division multiple access (OCDMA) scheme, the dynamic reconfigurable coding/decoding scheme based on chaos sequence is proposed to control optical switches and simple electrical shift registers. Since the chaos sequence is characterized with the property of pseudo random and maximum period time, the security mechanism of changing M-sequence codeword is implemented to avoid the tracking and attacking of unauthorized users (i.e., eavesdropper). Hence, The OCDMA system only needs to transmit the major parameter (e.g., initial condition and specified parameter) replacing the transmission of complex and mass encrypted key. In addition, the average changing step of proposed chaos/M-sequence mapping algorithm (i.e., 0.3<;variable slope <;0.4) is significantly much less than this of the linear function (i.e., variable slope =1) with electrical shift register processing. Hence, the proposed chaos/M-sequence algorithm is more simple, flexible and easy to implement in AWG-based OCDMA system compared to conventional scheme.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115952593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electronic flow document in the university environment using public-key infrastructure 大学环境下使用公钥基础设施的电子流程文档
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131949
R. Holy, M. Kalika, Lukáš Vopařil
{"title":"Electronic flow document in the university environment using public-key infrastructure","authors":"R. Holy, M. Kalika, Lukáš Vopařil","doi":"10.1109/ISNE.2015.7131949","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131949","url":null,"abstract":"This paper presents already built a public key infrastructure in the university environment. Infrastructure was established to enhance the security and credibility of the university systems and as a support for the development of a fully electronic flow of documents at the university. The article describes the main elements of the PKI along with the problems that had to be solved when deployed to a specific environment of the university.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128106087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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