集成一二极管一电阻(1D-1R)结构中基于siox的电阻开关存储器(ReRAM)的研究

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7131996

Yao‐Feng Chang, B. Fowler, F. Zhou, Jack C. Lee

{"title":"集成一二极管一电阻(1D-1R)结构中基于siox的电阻开关存储器(ReRAM)的研究","authors":"Yao‐Feng Chang, B. Fowler, F. Zhou, Jack C. Lee","doi":"10.1109/ISNE.2015.7131996","DOIUrl":null,"url":null,"abstract":"In this work, one diode-one resistor (1D-1R) SiOx-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 106 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 106 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture\",\"authors\":\"Yao‐Feng Chang, B. Fowler, F. Zhou, Jack C. Lee\",\"doi\":\"10.1109/ISNE.2015.7131996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, one diode-one resistor (1D-1R) SiOx-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 106 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 106 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7131996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在这项工作中，利用pnsi二极管作为选择器，制造了一二极管一电阻(1D-1R) six基阻性开关(RS)元件，以消除隐路问题。我们的工作和成果包括:1)证明了亚μs脉冲编程;2)集成1D-1R交叉棒阵列整流比> 106(满足ITRS路线图标准);3)多位运算;4) 106次耐力循环;5)对16×16 1D-1R阵列中未选择细胞具有强大的读写干扰免疫能力。

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Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture

In this work, one diode-one resistor (1D-1R) SiOx-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 106 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 106 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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