Tzu-Yang Lin, WeiHsuan Hsu, ChunYi Lee, ShengChung Huang, YuXuan Ding, W. Lan, M. Shih
{"title":"Electrical study of indium doped magnesium zinc oxide by spray pyrolysis","authors":"Tzu-Yang Lin, WeiHsuan Hsu, ChunYi Lee, ShengChung Huang, YuXuan Ding, W. Lan, M. Shih","doi":"10.1109/ISNE.2015.7131975","DOIUrl":null,"url":null,"abstract":"The undoped and indium doped magnesium zinc oxide was prepared by spray pyrolysis with magnesium nitrate, zinc acetate and indium nitrate precursors. For undoped thin film, the photolumescence spectrum shows the blue shift behavior with the increasing of deposition temperature. The near band edge emission with peak wavelength 365nm for magnesium znic oxide can be observed. With the increasing of indium nitrate, the film resistivity, concentration and mobility were measured. The N-type conduction with concentration around 8×1018cm-3 can be characterized.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The undoped and indium doped magnesium zinc oxide was prepared by spray pyrolysis with magnesium nitrate, zinc acetate and indium nitrate precursors. For undoped thin film, the photolumescence spectrum shows the blue shift behavior with the increasing of deposition temperature. The near band edge emission with peak wavelength 365nm for magnesium znic oxide can be observed. With the increasing of indium nitrate, the film resistivity, concentration and mobility were measured. The N-type conduction with concentration around 8×1018cm-3 can be characterized.