Simulation and demonstration of MOS-structure silicon solar cell using ITO/Al2O3/TiO2 antireflective coating

Abstract

Performance enhancement of the p-n junction silicon solar cells with ITO/Al₂O₃/TiO₂ antireflective coating is experimentally demonstrated. The reflectivity of the ITO/Al₂O₃/TiO₂ layer configuration with various thicknesses on Si wafer are simulated and characterized. Optical reflection and external quantum efficiency of the proposed MOS-structure Si solar cells are measured and compared with the changing in oxide-film thickness. An impressive efficiency enhancement of 42.39 % was obtained for the cell consisted of a 50-nm-ITO/5-nm-Al₂O₃/25-nm-TiO₂ antireflection coating, compared to the reference cells.