采用ITO/Al2O3/TiO2增透涂层的mos结构硅太阳电池的仿真与演示

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132011

Zhong-Fu Hou, W. Ho, C. Yeh, Ruei-Siang Sue, Yu-Tang Shen, C. Hu, Y. Deng

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引用次数: 0

摘要

实验证明了ITO/Al2O3/TiO2增透涂层对p-n结硅太阳电池性能的增强作用。模拟并表征了不同厚度的ITO/Al2O3/TiO2层构型在硅片上的反射率。测量了mos结构硅太阳电池的光反射率和外量子效率，并与氧化膜厚度的变化进行了比较。与对照电池相比，由50 nm- ito /5 nm- al2o3 /25 nm- tio2增透涂层组成的电池效率提高了42.39%。

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Simulation and demonstration of MOS-structure silicon solar cell using ITO/Al2O3/TiO2 antireflective coating

Performance enhancement of the p-n junction silicon solar cells with ITO/Al₂O₃/TiO₂ antireflective coating is experimentally demonstrated. The reflectivity of the ITO/Al₂O₃/TiO₂ layer configuration with various thicknesses on Si wafer are simulated and characterized. Optical reflection and external quantum efficiency of the proposed MOS-structure Si solar cells are measured and compared with the changing in oxide-film thickness. An impressive efficiency enhancement of 42.39 % was obtained for the cell consisted of a 50-nm-ITO/5-nm-Al₂O₃/25-nm-TiO₂ antireflection coating, compared to the reference cells.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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