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Synthesis and selenization of Cu2SnSe3 nanocrystals by a novel solution method 一种新的溶液法合成和硒化Cu2SnSe3纳米晶体
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132042
Yi-Hao Chen, S. Shei
{"title":"Synthesis and selenization of Cu2SnSe3 nanocrystals by a novel solution method","authors":"Yi-Hao Chen, S. Shei","doi":"10.1109/ISNE.2015.7132042","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132042","url":null,"abstract":"In this study, we firstly synthesized ternary Cu2SnSe3 nano ink by novel organic solvent polyetheramine by solvent-thermal reflux method. Cu2SnSe3 thin films were prepared by solvent-thermal reflux method for Cu/Sn ratio in three different ratios of 2/1, 1.8/1, and 1.4/1. Structure, surface morphology, composition, and electrical and optical properties at different process conditions were measured. SEM micrograph also shown that with Cu/Sn ratio increase, surface have many voids, not uniform for grain size and shape due to nonuniform grown second phase. In this experiment we display a nonvacuum based method to fabricate Cu2SnSe3 based device has been made to study copper factor on device performance. Furthermore, the selenization caused volume expansion of the film, and larger grains were consequently obtained in the CZTSe thin film. We proved that our method has great potential for further optoelectronic device due to low cost, high throughput and composition dependent properties.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116562034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improving the correlated color temperature uniformity of multi-chip white LEDs by SiO2 scatters 利用SiO2散射体改善多芯片白光led的相关色温均匀性
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131963
Chia-Nan Wang, Nguyen Thi Thu Khanh, N. Q. Anh
{"title":"Improving the correlated color temperature uniformity of multi-chip white LEDs by SiO2 scatters","authors":"Chia-Nan Wang, Nguyen Thi Thu Khanh, N. Q. Anh","doi":"10.1109/ISNE.2015.7131963","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131963","url":null,"abstract":"Two new multi-chip white LEDs (MCW-LEDs) structures are proposed and demonstrated, including the phosphor-quartz structure and the silicone-quartz structure. In comparison with the non-SiO2 packages, the CCT deviation can drop about 48% at most by using the proposed structures in the MCW-LEDs. The participation of about 5%~10% SiO2 can accomplish the MCW-LEDs with the improved angular color uniformity and the high lumen output optimally.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"61 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114050441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-resolution configuration of optically reconfigurable gate arrays 光学可重构门阵列的高分辨率配置
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131967
Kouta Akagi, Minoru Watanabe
{"title":"High-resolution configuration of optically reconfigurable gate arrays","authors":"Kouta Akagi, Minoru Watanabe","doi":"10.1109/ISNE.2015.7131967","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131967","url":null,"abstract":"Recently, optically reconfigurable gate arrays (OR-GAs) have been developed to offer numerous reconfiguration contexts with high-speed dynamic reconfiguration. Such ORGAs consist of a holographic memory, a laser array, and optically reconfigurable gate array VLSI. The storage capacity of a three-dimensional holographic memory is much higher than that of current two-dimensional memory technologies. Therefore, even Tera-gate-count circuit information can be stored on such a holographic memory. Moreover, high-speed reconfiguration can be realized by exploiting two-dimensional free optical connections between a holographic memory and a photodiode array on an optically reconfigurable gate array VLSI. Such high-speed dynamic reconfiguration can increase the gate array performance. Currently, we are trying to develop a high-density optically reconfigurable gate array VLSI. An important bottleneck is the limitation of light diffraction. This report presents a method of increasing the resolution of diffraction light for realizing a high-density optically reconfigurable gate array VLSI.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122701956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measurement of photodarkening resistance in heavily Yb3+-doped silica and silicate fibers 重掺Yb3+二氧化硅和硅酸盐纤维耐光变暗性能的测定
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131957
Yin-Wen Lee, Yu-Min Peng, D. Jheng, Sheng-Lung Huang, Shih-Ken Chen, Shibin Jiang
{"title":"Measurement of photodarkening resistance in heavily Yb3+-doped silica and silicate fibers","authors":"Yin-Wen Lee, Yu-Min Peng, D. Jheng, Sheng-Lung Huang, Shih-Ken Chen, Shibin Jiang","doi":"10.1109/ISNE.2015.7131957","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131957","url":null,"abstract":"We report the measurements of photodarkening in single-mode heavily Yb3+ doped silica and silicate fibers. Our data shows that under strong pumping conditions, the silicate fiber allows 13 times greater Yb3+ concentrations than the most photodarkening-resistant silica fibers to date without the onset of photodarkening at 635 nm.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132356498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1.25 GHz Q-enhanced filter with image rejection 一种具有图像抑制的1.25 GHz增q滤波器
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132017
Peng Gao, W. Cui, Xiaoyan Gui
{"title":"A 1.25 GHz Q-enhanced filter with image rejection","authors":"Peng Gao, W. Cui, Xiaoyan Gui","doi":"10.1109/ISNE.2015.7132017","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132017","url":null,"abstract":"A 1.25 GHz two-stage band-pass filter fabricated in TSMC 90 nm CMOS process is presented. The Q-compensate technique is used for better filtering performance, and a notch circuit is added to achieve the desired image rejection of 40 dB. Measured gain of this filter is 16.3 dB at 1.25 GHz with the pass band width of 20 MHz. The out-of-band suppression at 100 MHz offset and image rejection at 1.1 GHz are 26 dB and 42 dB, respectively. The power consumption is 22mA from a 1.2 V supply.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134380027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A laser diffraction measuring system for submicron pixel size image sensor 一种亚微米像素级图像传感器激光衍射测量系统
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7131961
Jun Zhou, Dong Wu, Lixia Dong
{"title":"A laser diffraction measuring system for submicron pixel size image sensor","authors":"Jun Zhou, Dong Wu, Lixia Dong","doi":"10.1109/ISNE.2015.7131961","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7131961","url":null,"abstract":"This paper reports a laser diffraction measuring system based on a lab made 26M (5120×5120) pixels image sensor with a pixel pitch of 0.95μm. The long distance required in the traditional method to match the surface of the image sensor with large pixels is shortened, and the image sensor with submicron pixels becomes the key to capture the patterns at short range which is still meet the condition of fraunhofer approximation. The system refers to using a digital optoelectronic sensor array to sample the light transmitted through a specimen without the use of any imaging lenses between the object and the sensor planes. The hardware for such an imaging geometry is significantly simpler and much more compact and lightweight than that of conventional measuring system. In addition, an algorithm of image processing, termed super resolution image reconstruction, is used to further improve the resolution and is required to achieve subpixel spatial resolution in measuring system. In the experimental measurement, the final result can reach the accuracy of 0.98%.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133221282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A window-based methodology for ADBs insertion and clock gating design in multiple power modes 多功率模式下基于窗口的adb插入和时钟门控设计方法
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132024
W. Cheng, Po-Han Wu
{"title":"A window-based methodology for ADBs insertion and clock gating design in multiple power modes","authors":"W. Cheng, Po-Han Wu","doi":"10.1109/ISNE.2015.7132024","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132024","url":null,"abstract":"In the low power design of integrated circuits, multiple power modes and clock gating are the two common techniques to reduce dynamic power consumption. In the multiple power modes designs, replacing some of the normal buffers with adjustable delay buffers (ADBs) and assign different delay values in different power modes is one of the promising solutions to satisfy the clock skew constraint, and clock gate splitting is necessary to satisfy the enable timing constraint in clock gating designs. However, both ADBs insertion and gate splitting increase the hardware cost. In this paper, under both the enable timing constraint and clock skew constraint, we propose a skew-window based methodology to reduce the total hardware cost of ADBs and clock gates simultaneously. In comparison with when only ADBs insertion or clock gate splitting technique is applied, experimental results show that our methodology can satisfy the constraints in all the power modes and reduce the hardware cost effectively.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117035404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rectification of QR-code images using the parametric cylindrical surface model 基于参数化柱面模型的qr码图像校正
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132033
K. Lay, Lee-Jyi Wang, Chun-Hung Wang
{"title":"Rectification of QR-code images using the parametric cylindrical surface model","authors":"K. Lay, Lee-Jyi Wang, Chun-Hung Wang","doi":"10.1109/ISNE.2015.7132033","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132033","url":null,"abstract":"In recent years, QR codes have found a wide range of applications in business and industry. Moreover, their popularity and function are still growing (fast). Therefore, the processing of the images of QR codes is an important task. In this paper, we try to solve a problem encountered in QR decoding when the QR code is printed near the binding edge inside a book or on the surface of a cylindrical container. When a picture is taken on such a QR code, the picture is no longer in a rectangular shape, which is supposedly the “right” shape that any QR code should take, due to warping from the image capturing mechanism by the camera. We refer to such warping as cylinder-to-screen (C2S) warping. This warping translates into serious distortion of the original QR-code image (also referred to as QR image, for short) and thus causes failure in its decoding. In this paper, a mathematical model called the parametric cylindrical surface model (PCSM) is proposed. Then, based on it, a scheme is proposed to rectify C2S-warped QR images. Experiments show that the proposed scheme is effective, in the sense that many failed QR decodings become successful after the rectification.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124097794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Antireflection and high absorption coefficient nano-porous tin sulfides 抗反射、高吸收系数的纳米多孔硫化锡
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132010
Chih-Hsien Cheng, Gong-Ru Lin
{"title":"Antireflection and high absorption coefficient nano-porous tin sulfides","authors":"Chih-Hsien Cheng, Gong-Ru Lin","doi":"10.1109/ISNE.2015.7132010","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132010","url":null,"abstract":"The self-organized two dimensional (2D) honeycomb-like tin sulfide (SnS) nano-porous structure with high absorption and depolarization features is solid-phase synthesis by RF sputtering. The high absorption coefficient up to 105 cm-1 for planar and nano-porous SnS is enlarged and red-shifted absorption bandedge from 1.43 and 1.16, and the absorption coefficient band edge is increasing to the higher wavelength from 450 to 570 nm.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128483382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si1−xGex on silicon 硅上非化学计量Si1 - xGex的折射率和光带隙
2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI: 10.1109/ISNE.2015.7132002
Bo-Ji Huang, Chung-Lun Wu, Yung-Hsiang Lin, Po‐Han Chang, Chih-I Wu, Gong-Ru Lin
{"title":"Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si1−xGex on silicon","authors":"Bo-Ji Huang, Chung-Lun Wu, Yung-Hsiang Lin, Po‐Han Chang, Chih-I Wu, Gong-Ru Lin","doi":"10.1109/ISNE.2015.7132002","DOIUrl":"https://doi.org/10.1109/ISNE.2015.7132002","url":null,"abstract":"Nonstoichiometric Si<sub>1-x</sub>Ge<sub>x</sub> films fabricated by plasma enhanced chemical vapor deposition (PECVD) with different flounce ratios are demonstrated to show the composition ratio dependent optical properties, including refractive index, bandgap and optical absorption. By increasing the fluence ratio from 0.2 to 0.5, the refractive index of Si<sub>1-x</sub>Ge<sub>x</sub> film raises from 3.527 to 3.927, with the absorption coefficient enlarging from <;<;1cm<sup>-1</sup> to 31.12 cm<sup>-1</sup>.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"79 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125973007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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