硅上非化学计量Si1 - xGex的折射率和光带隙

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132002

Bo-Ji Huang, Chung-Lun Wu, Yung-Hsiang Lin, Po‐Han Chang, Chih-I Wu, Gong-Ru Lin

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引用次数: 0

摘要

采用等离子体增强化学气相沉积法(PECVD)制备了具有不同褶边比的非化学计量Si1-xGex薄膜，并证明了其光学性能与组分比有关，包括折射率、带隙和光吸收。当影响比从0.2增加到0.5时，Si1-xGex薄膜的折射率从3.527增加到3.927，吸收系数从-1增加到31.12 cm-1。

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Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si1−xGex on silicon

Nonstoichiometric Si_1-xGe_x films fabricated by plasma enhanced chemical vapor deposition (PECVD) with different flounce ratios are demonstrated to show the composition ratio dependent optical properties, including refractive index, bandgap and optical absorption. By increasing the fluence ratio from 0.2 to 0.5, the refractive index of Si_1-xGe_x film raises from 3.527 to 3.927, with the absorption coefficient enlarging from <;<;1cm^-1 to 31.12 cm^-1.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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