{"title":"Synthesis and selenization of Cu2SnSe3 nanocrystals by a novel solution method","authors":"Yi-Hao Chen, S. Shei","doi":"10.1109/ISNE.2015.7132042","DOIUrl":null,"url":null,"abstract":"In this study, we firstly synthesized ternary Cu2SnSe3 nano ink by novel organic solvent polyetheramine by solvent-thermal reflux method. Cu2SnSe3 thin films were prepared by solvent-thermal reflux method for Cu/Sn ratio in three different ratios of 2/1, 1.8/1, and 1.4/1. Structure, surface morphology, composition, and electrical and optical properties at different process conditions were measured. SEM micrograph also shown that with Cu/Sn ratio increase, surface have many voids, not uniform for grain size and shape due to nonuniform grown second phase. In this experiment we display a nonvacuum based method to fabricate Cu2SnSe3 based device has been made to study copper factor on device performance. Furthermore, the selenization caused volume expansion of the film, and larger grains were consequently obtained in the CZTSe thin film. We proved that our method has great potential for further optoelectronic device due to low cost, high throughput and composition dependent properties.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7132042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this study, we firstly synthesized ternary Cu2SnSe3 nano ink by novel organic solvent polyetheramine by solvent-thermal reflux method. Cu2SnSe3 thin films were prepared by solvent-thermal reflux method for Cu/Sn ratio in three different ratios of 2/1, 1.8/1, and 1.4/1. Structure, surface morphology, composition, and electrical and optical properties at different process conditions were measured. SEM micrograph also shown that with Cu/Sn ratio increase, surface have many voids, not uniform for grain size and shape due to nonuniform grown second phase. In this experiment we display a nonvacuum based method to fabricate Cu2SnSe3 based device has been made to study copper factor on device performance. Furthermore, the selenization caused volume expansion of the film, and larger grains were consequently obtained in the CZTSe thin film. We proved that our method has great potential for further optoelectronic device due to low cost, high throughput and composition dependent properties.