{"title":"一种具有图像抑制的1.25 GHz增q滤波器","authors":"Peng Gao, W. Cui, Xiaoyan Gui","doi":"10.1109/ISNE.2015.7132017","DOIUrl":null,"url":null,"abstract":"A 1.25 GHz two-stage band-pass filter fabricated in TSMC 90 nm CMOS process is presented. The Q-compensate technique is used for better filtering performance, and a notch circuit is added to achieve the desired image rejection of 40 dB. Measured gain of this filter is 16.3 dB at 1.25 GHz with the pass band width of 20 MHz. The out-of-band suppression at 100 MHz offset and image rejection at 1.1 GHz are 26 dB and 42 dB, respectively. The power consumption is 22mA from a 1.2 V supply.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1.25 GHz Q-enhanced filter with image rejection\",\"authors\":\"Peng Gao, W. Cui, Xiaoyan Gui\",\"doi\":\"10.1109/ISNE.2015.7132017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.25 GHz two-stage band-pass filter fabricated in TSMC 90 nm CMOS process is presented. The Q-compensate technique is used for better filtering performance, and a notch circuit is added to achieve the desired image rejection of 40 dB. Measured gain of this filter is 16.3 dB at 1.25 GHz with the pass band width of 20 MHz. The out-of-band suppression at 100 MHz offset and image rejection at 1.1 GHz are 26 dB and 42 dB, respectively. The power consumption is 22mA from a 1.2 V supply.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7132017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7132017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.25 GHz two-stage band-pass filter fabricated in TSMC 90 nm CMOS process is presented. The Q-compensate technique is used for better filtering performance, and a notch circuit is added to achieve the desired image rejection of 40 dB. Measured gain of this filter is 16.3 dB at 1.25 GHz with the pass band width of 20 MHz. The out-of-band suppression at 100 MHz offset and image rejection at 1.1 GHz are 26 dB and 42 dB, respectively. The power consumption is 22mA from a 1.2 V supply.
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