{"title":"从静电电位的角度研究短沟道无结圆柱形围栅mosfet的亚阈值行为","authors":"Chunsheng Jiang, R. Liang, Jing Wang, Jun Xu","doi":"10.1109/ISNE.2015.7131955","DOIUrl":null,"url":null,"abstract":"An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green's function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.","PeriodicalId":152001,"journal":{"name":"2015 International Symposium on Next-Generation Electronics (ISNE)","volume":"340 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A study of subthreshold behavior of short-channel junctionless cylindrical surrounding-gate MOSFETs from an electrostatic potential viewpoint\",\"authors\":\"Chunsheng Jiang, R. Liang, Jing Wang, Jun Xu\",\"doi\":\"10.1109/ISNE.2015.7131955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green's function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.\",\"PeriodicalId\":152001,\"journal\":{\"name\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"340 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2015.7131955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2015.7131955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study of subthreshold behavior of short-channel junctionless cylindrical surrounding-gate MOSFETs from an electrostatic potential viewpoint
An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green's function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.
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