Mu-Chun Wang, Jian-Liang Lin, Shao-Syuan Syu, W. Liao, W. Lan, Shea-Jue Wang
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Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies
Higher threshold-voltage (VT) doping energy provides the deeper influence to channel controllability. For drive current (IDS) consideration, the higher one demonstrates the larger IDS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and the drop ratio at higher doping energy process is converse at higher temperature stress.
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