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Gain-Boosting Stage Frequency Response optimization 增益增强级频率响应优化
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923614
Tarik Azis
{"title":"Gain-Boosting Stage Frequency Response optimization","authors":"Tarik Azis","doi":"10.1109/SMICND.2019.8923614","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923614","url":null,"abstract":"The goal of this work is to bring more insight into the gain-boosting technique and to use that in designing a high swing, high precision CMOS OTA in a 0.6um process, with a small settling time given its low power consumption.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124267476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions 单个ZnO纳米棒p-n结的均匀电阻开关
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923637
S. Tiagulskyi, R. Yatskiv, H. Faitová, J. Vanis, J. Grym
{"title":"Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions","authors":"S. Tiagulskyi, R. Yatskiv, H. Faitová, J. Vanis, J. Grym","doi":"10.1109/smicnd.2019.8923637","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923637","url":null,"abstract":"Electrical properties of a single verticallyoriented n-ZnO nanorod on a p-GaN substrate are investigated by measuring their current-voltage characteristics. The current-voltage characteristics are measured using nanoprobe in the high vacuum chamber of a scanning electron microscope. The observed changes of the resistivity are attributed to the field induced change of the potential barrier at the p-n junction interface.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EMI shielding flexible thin films based on graphene-MWCNT nanocomposites 基于石墨烯- mwcnt纳米复合材料的电磁干扰屏蔽柔性薄膜
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923956
A. Obreja, V. Buiculescu, R. Gavrila, F. Comanescu, V. Ţucureanu, O. Tutunaru, M. Dragoman
{"title":"EMI shielding flexible thin films based on graphene-MWCNT nanocomposites","authors":"A. Obreja, V. Buiculescu, R. Gavrila, F. Comanescu, V. Ţucureanu, O. Tutunaru, M. Dragoman","doi":"10.1109/SMICND.2019.8923956","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923956","url":null,"abstract":"This work presents a facile method for preparation of thin flexible films starting from inks based graphene oxide and MWCNT embeded in a polymer PEDOT:PSS matrix. The EMI shielding efficiency was evaluated for films thickness in the range of 10-20 microns, results revealing values up to -40 dB in X band frequency for graphene-MWCNT nanocomposites.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123797492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced Ripple Blocker 增强型纹波阻断器
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923768
Mădalina Elena Bundaru, D. Dobrescu, E. Franti, M. Enachescu, M. Dascalu, L. Dobrescu
{"title":"Enhanced Ripple Blocker","authors":"Mădalina Elena Bundaru, D. Dobrescu, E. Franti, M. Enachescu, M. Dascalu, L. Dobrescu","doi":"10.1109/smicnd.2019.8923768","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923768","url":null,"abstract":"The present paper introduces a Ripple blocker architecture having a high power supply rejection ratio, as the main feature. The specific performance circuit parameters, the block circuit, the main sub-circuits of the designed Ripple blocker together with the transistor level circuits are presented. The Ripple blocker is provided with a current sense circuit that ensures the capability to maintain the desired behavior with a wide range of load resistor values.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125503832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomistic Models of Nanosystems 纳米系统的原子模型
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923632
T. Sandu
{"title":"Atomistic Models of Nanosystems","authors":"T. Sandu","doi":"10.1109/SMICND.2019.8923632","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923632","url":null,"abstract":"Nanoscopic systems contain, in essence, a finite number of atoms. Description of nanosystems with first principles methods of quantum mechanics is still a cumbersome process, hence simpler models are rather used in the process of modeling. In this communication we analyze atomistic approaches like the empirical tight-binding (ETB) method that can be used with many flavors of sophistication to calculate both electronic structure and transport properties of nanosystems of various sizes ranging from tens and hundreds to millions of atoms. In contrast, the ab-initio methods deal with smaller systems, yet they provide reliable information, like equilibrium geometry and charge distribution, which are not fully captured by ETB methods. Several examples of relevant nanosystems that uses either ETB or ab-initio methods are provided.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130419289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical graphene based biosensor for biological fluids analysis 用于生物流体分析的垂直石墨烯生物传感器
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923745
E. Anghel, O. Simionescu, C. Pachiu, O. Tutunaru, C. Mihailescu, A. Avram
{"title":"Vertical graphene based biosensor for biological fluids analysis","authors":"E. Anghel, O. Simionescu, C. Pachiu, O. Tutunaru, C. Mihailescu, A. Avram","doi":"10.1109/SMICND.2019.8923745","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923745","url":null,"abstract":"Research activities on vertical graphene applications is very extensive, special interest being dedicated to the biomedical field with potential use in diagnosis, controlled release of drugs, tissue engineering, imaging and therapy. This paper presents the a method of obtaining vertical graphene using the PECVD method (Plasma Enhanced Chemical Vapor Deposition) and material characterization for the further development of a device for biological fluids analysis with potential application in identification of biomolecules. Impedance measurements have been made using Electrochemical Impedance Spectroscopy (EIS) for validation of the grown material.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123345860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Latest Concept to Generate Temperature Compensated Voltage Reference 产生温度补偿电压基准的最新概念
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923633
V. Banu, M. Popescu, P. Godignon
{"title":"Latest Concept to Generate Temperature Compensated Voltage Reference","authors":"V. Banu, M. Popescu, P. Godignon","doi":"10.1109/SMICND.2019.8923633","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923633","url":null,"abstract":"This work is the first public presentation regarding a novel, proprietary concept - Delta Reference - for generating sub-1V temperature compensated voltage reference. Delta Reference is capable to sustain a high temperature range and to enable the use of a large variety of temperature sensitive devices. By employing the present concept, we are able to generate thermal compensated voltage reference having the same temperature coefficient (TC) such as the well-known bandgap reference, but with multiple added advantages.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129653908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Worst-Case Input Voltage in Buck, Boost and Buck-Boost converters Buck, Boost和Buck-Boost转换器的最坏情况输入电压
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923845
V. Trifa, G. Brezeanu, E. Ceuca
{"title":"Worst-Case Input Voltage in Buck, Boost and Buck-Boost converters","authors":"V. Trifa, G. Brezeanu, E. Ceuca","doi":"10.1109/smicnd.2019.8923845","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923845","url":null,"abstract":"Due to the increasing demands and rigor required for the functioning of electronic circuits, modern simulators must allow for more complex analyzes. These can be very effective tools when the designer does not have enough physical time and wants to obtain a solution that meets the requirements of the project, because allow multiple checks in a short periodt Analysis using circuit equations is more efficient and offers users a closer look at the actual operating conditions.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129943805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bulk nanocrystalline graphite thin films for piezorezistive sensing applications 用于压敏传感的大块纳米晶石墨薄膜
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923644
O. Simionescu, E. Anghel, R. Popa, C. Pachiu, R. Gavrila, F. Comanescu, A. Avram, G. Dinescu
{"title":"Bulk nanocrystalline graphite thin films for piezorezistive sensing applications","authors":"O. Simionescu, E. Anghel, R. Popa, C. Pachiu, R. Gavrila, F. Comanescu, A. Avram, G. Dinescu","doi":"10.1109/SMICND.2019.8923644","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923644","url":null,"abstract":"Bulk nanocrystalline graphite has been investigated as a possible candidate for piezoresistive sensors. Several thin films have been grown by PECVD and investigated through various techniques: Raman spectroscopy, electrical characterization, AFM, profilometry and spectroscopic ellipsometry. After a careful analysis of our findings we have weighted the use of the material as a piezoresistive sensor and made a goal for future research.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132635559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2 用组成工程控制SWIR光敏极限:从Ge到GeSi纳米晶嵌入TiO2
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8924034
I. Dascalescu, O. Cojocaru, I. Lalau, C. Palade, A. Slav, A. Lepadatu, S. Lazanu, T. Stoica, M. Ciurea
{"title":"Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2","authors":"I. Dascalescu, O. Cojocaru, I. Lalau, C. Palade, A. Slav, A. Lepadatu, S. Lazanu, T. Stoica, M. Ciurea","doi":"10.1109/SMICND.2019.8924034","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8924034","url":null,"abstract":"The VIS-SWIR photosensing properties of Ge and GeSi NCs embedded in TiO2 films are investigated. For this, we deposit GeTiO2 and GeSiTiO2 films, respectively by magnetron sputtering and then we perform rapid thermal annealing (RTA) for Ge NCs and GeSi NCs formation, respectively. Raman studies and spectral photocurrent measurements were carried out. Ge NCs formation is evidenced in the Raman spectrum of GeTiO2 film annealed at 550 °C. The photocurrent spectra measured on the Ge NCs-TiO2 film present four peaks separated by deconvolution. The broad peaks at ~700, 890, 1010 nm are due to photo-effects in the Ge NCs-TiO2 film. More than that, the photocurrent increases exponentially with the increase of bias voltage. The cut-off wavelength is ~1240 nm. We achieve the extension of the photosensitivity limit to ~1310 nm in GeSi NCs-TiO2 films (800 °C RTA).","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"13 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132757039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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