发布求助
文献互助 智能选刊 最新文献

2019 International Semiconductor Conference (CAS)最新文献

筛选
英文 中文
Epoxy nanocomposites based on MWCNT 基于MWCNT的环氧纳米复合材料
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923947
C. Păun, C. Obreja, F. Comanescu, V. Ţucureanu, O. Tutunaru, C. Romanițan, O. Ionescu
{"title":"Epoxy nanocomposites based on MWCNT","authors":"C. Păun, C. Obreja, F. Comanescu, V. Ţucureanu, O. Tutunaru, C. Romanițan, O. Ionescu","doi":"10.1109/SMICND.2019.8923947","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923947","url":null,"abstract":"This paper present the preparation of epoxy nanocomposites based on MWCNT. At different loading of MWCNT filler, the resulted nanocomposites were characterised using FTIR, SEM, Raman and XRD techniques. The mechanical and anti-static properties were evaluated for cast films.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122403008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Signal Processing Circuit for Spirometry 肺活量测定信号处理电路
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923878
C. Vasilache, D. Dobrescu, E. Franti, O. Profirescu, M. Dascalu, L. Dobrescu
{"title":"Signal Processing Circuit for Spirometry","authors":"C. Vasilache, D. Dobrescu, E. Franti, O. Profirescu, M. Dascalu, L. Dobrescu","doi":"10.1109/smicnd.2019.8923878","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923878","url":null,"abstract":"This paper presents an electronic circuit that processes signal for electronic spirometers. Internal structure and the main circuits are described. The whole system has been built around a pressure sensor. The circuit has been implemented and the results validate the accuracy of measurements that recommend this electronic system for medical usage.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126901626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polyaniline Working Electrodes For Glucose Sensing 用于葡萄糖传感的聚苯胺工作电极
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923837
C. Mihailescu, C. Moldovan, C. Brasoveanu, M. Savin, S. Dinulescu, B. Firtat, C. Codreanu, I. Ceaușu, I. Stanciu
{"title":"Polyaniline Working Electrodes For Glucose Sensing","authors":"C. Mihailescu, C. Moldovan, C. Brasoveanu, M. Savin, S. Dinulescu, B. Firtat, C. Codreanu, I. Ceaușu, I. Stanciu","doi":"10.1109/SMICND.2019.8923837","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923837","url":null,"abstract":"A simple technique has been applied to the development of a glucose amperometric sensor by electro polymerizing aniline on platinum coated working electrode. The carboxyl-reactive groups of glucose oxidase were entrapped into the conductive layer of polyaniline formed on the electrode. The modified electrodes have been investigated by cyclic voltammetry, single potential step chronoamperometry and optical microscopy. The functionality of the chemically modified electrode was demonstrated and has been obtained by applying recording the chronoamperometry in presence of glucose concentrations at a low constant voltage of 220 mV.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125924489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CAS 2019 Copyright Page CAS 2019版权专页
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923811
{"title":"CAS 2019 Copyright Page","authors":"","doi":"10.1109/smicnd.2019.8923811","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923811","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125450081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct writing of Prussian blue patterns down to micrometer scale: preliminary tests results 直接书写普鲁士蓝图案到微米尺度:初步测试结果
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923894
C. Pachiu, M. Carp, A. Radoi, R. Popa, M. Suchea, O. Tutunaru
{"title":"Direct writing of Prussian blue patterns down to micrometer scale: preliminary tests results","authors":"C. Pachiu, M. Carp, A. Radoi, R. Popa, M. Suchea, O. Tutunaru","doi":"10.1109/SMICND.2019.8923894","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923894","url":null,"abstract":"We report the controlled writing of Prussian blue patterns down to ~ 1 μm on top of metallic and insulating (SiO2) layers. The functionalization of metallic electrodes with the well know redox mediator Prussian blue allows development of electrochemical sensors for hydrogen peroxide.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128131473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Smart Beamforming for energy-aware wireless power transmission 用于能量感知无线电力传输的智能波束成形
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8924004
D. Masotti, M. Shanawani, A. Costanzo
{"title":"Smart Beamforming for energy-aware wireless power transmission","authors":"D. Masotti, M. Shanawani, A. Costanzo","doi":"10.1109/SMICND.2019.8924004","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8924004","url":null,"abstract":"In wireless power transfer (WPT) applications the weakest contribution to the overall link efficiency is the effective selection of the zone to be powered. Hence, the need for smart transmitting architectures is strong. In this contribution, two promising families of highly-reconfigurable arrays are presented: first, time-modulated arrays are considered as a powerful tool for selective WPT, through the exploitation of the sideband radiation phenomenon; frequency-diverse arrays are, then, proposed for a smarter radiation, able to focus the beam in range, too. In both these cases, the accurate nonlinear/electromagnetic analysis approach, relying on the Harmonic Balance technique, demonstrates its effectiveness.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113998593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Tunnelling Model To Calculate GIDL Current For MOSFET And TFET 一种计算MOSFET和TFET GIDL电流的新隧道模型
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923623
A. Sen, J. Das
{"title":"A New Tunnelling Model To Calculate GIDL Current For MOSFET And TFET","authors":"A. Sen, J. Das","doi":"10.1109/SMICND.2019.8923623","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923623","url":null,"abstract":"This paper has proposed an innovative band to band tunneling current model using De- Casteljau’s algorithm, followed by Bezier curve method and WKB approximation. After verifying the validity of this proposed tunneling model with respect to electron energy and tunnel width, the expression of tunneling probability is applied to the graded drain MOSFET and TFET to find out the expression of Gate-Induced-Drain- Leakage current. The variation of this leakage current of this proposed model is verified by comparing with other previous models and the result is well matched.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124061279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband Y-type Divider in Ku-band Using Substrate Integrated Waveguide 基于基板集成波导的ku波段宽带y型分频器
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8924000
Y. Fu, K. Y. Chan, M. Banciu, R. Ramer
{"title":"Broadband Y-type Divider in Ku-band Using Substrate Integrated Waveguide","authors":"Y. Fu, K. Y. Chan, M. Banciu, R. Ramer","doi":"10.1109/SMICND.2019.8924000","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8924000","url":null,"abstract":"This paper presents the study and analyses on substrate integrated waveguide (SIW) Y-type power dividers. In traditional configurations, a potential stop peak exists and separates the dominant frequency band. To overcome this drawback, a Y-type power divider with an enhanced bandwidth is proposed, where the reflection at the stop peak is reduced. The broadband characteristic relies on the adjustment of the TE10 and TE30 modes in the coupling region. The symmetric topology could ensure balanced phase and amplitude properties at two output ports. For the demonstration, the prototype is fabricated by the printed circuit board (PCB) process. Measurements agree well with simulations, and a fractional bandwidth of 50.26% around the centre frequency of 15 GHz is measured with 10 dB return loss.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124090979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nano-Structural Requirements for Artificial Intelligence & Blockchain Applications 人工智能和区块链应用的纳米结构需求
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923787
R. Mihai, Mihaela Mali.a, Gheorghe M. Ștefan
{"title":"Nano-Structural Requirements for Artificial Intelligence & Blockchain Applications","authors":"R. Mihai, Mihaela Mali.a, Gheorghe M. Ștefan","doi":"10.1109/SMICND.2019.8923787","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923787","url":null,"abstract":"Artificial Intelligence and Blockchain are among the most demanding technologies requesting tremendously powerful computation engines capable to deliver fast, cheap and energy aware solutions. These technologies provide the safe computational environment for making intelligent decisions related to complex issues. Are presented the functional aspects and the structural requirements for the emerging intelligent world – the world dominated by technologically assisted consensual decisions and selfenforced regulations. Finally, are asserted the improvements required from the emerging nano-technologies.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116179078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Capacitor Multiplier with One Transconductor Cell 电容倍增器与一个Transconductor电池
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923824
Paul Coste, Paul Martari, M. Neag, Vlad Ionescu
{"title":"Capacitor Multiplier with One Transconductor Cell","authors":"Paul Coste, Paul Martari, M. Neag, Vlad Ionescu","doi":"10.1109/SMICND.2019.8923824","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923824","url":null,"abstract":"A new programmable capacitance multiplier implementation is presented in this paper. It is based on a fairly known architecture, but the proposed circuit employs only one linear transconductor (Gm cell). The mathematical analysis of the new capacitance multiplier is presented along with simulations performoed on a circuit implemented in standard 0.18-μm CMOS process. Two applications are also presented: a triangular waveform generator and afully differential lossy integrator, both with emulated capacitances programmable over three octaves.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128140356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信