{"title":"一种计算MOSFET和TFET GIDL电流的新隧道模型","authors":"A. Sen, J. Das","doi":"10.1109/SMICND.2019.8923623","DOIUrl":null,"url":null,"abstract":"This paper has proposed an innovative band to band tunneling current model using De- Casteljau’s algorithm, followed by Bezier curve method and WKB approximation. After verifying the validity of this proposed tunneling model with respect to electron energy and tunnel width, the expression of tunneling probability is applied to the graded drain MOSFET and TFET to find out the expression of Gate-Induced-Drain- Leakage current. The variation of this leakage current of this proposed model is verified by comparing with other previous models and the result is well matched.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A New Tunnelling Model To Calculate GIDL Current For MOSFET And TFET\",\"authors\":\"A. Sen, J. Das\",\"doi\":\"10.1109/SMICND.2019.8923623\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper has proposed an innovative band to band tunneling current model using De- Casteljau’s algorithm, followed by Bezier curve method and WKB approximation. After verifying the validity of this proposed tunneling model with respect to electron energy and tunnel width, the expression of tunneling probability is applied to the graded drain MOSFET and TFET to find out the expression of Gate-Induced-Drain- Leakage current. The variation of this leakage current of this proposed model is verified by comparing with other previous models and the result is well matched.\",\"PeriodicalId\":151985,\"journal\":{\"name\":\"2019 International Semiconductor Conference (CAS)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2019.8923623\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2019.8923623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A New Tunnelling Model To Calculate GIDL Current For MOSFET And TFET
This paper has proposed an innovative band to band tunneling current model using De- Casteljau’s algorithm, followed by Bezier curve method and WKB approximation. After verifying the validity of this proposed tunneling model with respect to electron energy and tunnel width, the expression of tunneling probability is applied to the graded drain MOSFET and TFET to find out the expression of Gate-Induced-Drain- Leakage current. The variation of this leakage current of this proposed model is verified by comparing with other previous models and the result is well matched.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
