2019 International Semiconductor Conference (CAS)最新文献

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Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper) 毫米波集成硅器件:有源与无源——善与恶的永恒斗争(特邀论文)
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923669
Michele Spasaro, D. Zito
{"title":"Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)","authors":"Michele Spasaro, D. Zito","doi":"10.1109/SMICND.2019.8923669","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923669","url":null,"abstract":"With the extreme scaling, active devices in both CMOS and BiCMOS technologies have reached outstanding $f_{T}/f_{max}$, enabling an ever-increasing number of existing and emerging applications in the microwave and millimeter wave (mm-wave) frequency range. The increase in transistors $f_{T}/f_{max}$ has been so much significant that the performance of microwave and mm-wave ICs are limited mainly by losses in passive devices. In this paper, we address a discussion on qualitative and quantitative aspects that may help to further unveil the impact of such losses on the overall circuit performance and stimulate the adoption of effective loss-aware design methodologies. As example, we report the results related to the design of low power mm-wave low noise amplifiers (LNAs). Our results show how, in low power regime, the peformances of mm-wave LNAs are dominated by losses in passive components. We also show how loss-aware design methodologies can mitigate the performance degradation due to passives, resulting as an important tool to get the full potential out of the active devices available today.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134536646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Discrete Gravitational Search Algorithm (DGSA) applied for the Close-Enough Travelling Salesman Problem (TSP / CETSP) 离散引力搜索算法(DGSA)在足够近旅行商问题(TSP / CETSP)中的应用
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923719
M. Antonescu, C. Bîră
{"title":"Discrete Gravitational Search Algorithm (DGSA) applied for the Close-Enough Travelling Salesman Problem (TSP / CETSP)","authors":"M. Antonescu, C. Bîră","doi":"10.1109/SMICND.2019.8923719","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923719","url":null,"abstract":"TSP (travelling salesman problem) is a NPhard problem, and several exact and heuristics solutions exist. Exact solutions consume too many resources (computation and time) and heuristic solutions do not provide global optimum path. We propose another heuristic variation of the TSP and CETSP solver (DGSA-TSP and DGSA-CETSP), based on discrete gravitational search algorithm and two novel rubber-band algorithm (RBA) implementations; we benchmark it against the GSOA (growing self-organizing array) variant and obtain similaraccuracy results.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"76 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131028188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental Characteristics of Organic Transistor with Silver Gate 银栅有机晶体管的实验特性
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923962
C. Ravariu, D. Mihaiescu, D. Istrati, Alina Moroșan
{"title":"Experimental Characteristics of Organic Transistor with Silver Gate","authors":"C. Ravariu, D. Mihaiescu, D. Istrati, Alina Moroșan","doi":"10.1109/SMICND.2019.8923962","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923962","url":null,"abstract":"The applications of nano-core materials with doped external shell by para-amino-benzoic acid to construct an organic transistor are presented. The transistor adopts a typical configuration of an organic transistor, but using point contacts as a pseudo-MOS transistor. The device is prepared by Ag deposition on a glass substrate, followed by dip coating depositions for the organic materials. The measured static characteristics revealed acceptor behavior of the active film, indicating the accumulation onset at negative gate voltage. At higher voltages, some oscillations are recorded in this device with silver gate.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123009592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coverage fulfillment methods as key points in functional verification of integrated circuits 覆盖实现方法是集成电路功能验证的关键
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923695
A. Dinu, P. Ogrutan
{"title":"Coverage fulfillment methods as key points in functional verification of integrated circuits","authors":"A. Dinu, P. Ogrutan","doi":"10.1109/SMICND.2019.8923695","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923695","url":null,"abstract":"Considering progress in semiconductor manufacturing processes (where technology advanced creating transistors from 10 μm in 1971 to a few nm nowadays), integrated circuits have become more and more complex and have embedded huge number of functionalities. Consequently, functional verification of verification circuits designs highly increased in difficulty. Both the academic community and the industry are involved in research projects for obtaining an efficient thorough verification of circuit designs. Thoroughness of verification is defined by metrics fulfillment in verification process. Aligning to this global effort, in this paper, four methodologies of fulfilling coverage (most important component of metrics) are described and compared. The study is concerned on outcome of each method, and on implementation effort, as well.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116619020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Performance Analysis for High Resolution Digitally Programmable Potentiometers 高分辨率数字可编程电位器性能分析
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923775
G. Chiranu, C. Tudoran, O. Neagoe, G. Brezeanu
{"title":"Performance Analysis for High Resolution Digitally Programmable Potentiometers","authors":"G. Chiranu, C. Tudoran, O. Neagoe, G. Brezeanu","doi":"10.1109/SMICND.2019.8923775","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923775","url":null,"abstract":"This paper aims to find adequate solutions for implementing a high resolution digitally programmable potentiometer by taking into consideration the production cost and also the performance indicators such as the linearity characteristics. All described solutions were implemented in a 5V 0.18μm CMOS process and their performances were verified by simulations.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"7 19","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120966131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Modelling & Semiconductor Devices – Student Papers 建模与半导体器件-学生论文
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923920
{"title":"Modelling & Semiconductor Devices – Student Papers","authors":"","doi":"10.1109/smicnd.2019.8923920","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923920","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124537774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoelectric 1-D nanostructures for the energy harvesting applications 用于能量收集的压电一维纳米结构
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923647
M. Chelu, H. Stroescu, J. Moreno, M. Anastasescu, S. Preda, M. Gartner, C. Moldovan, M. Gheorghe
{"title":"Piezoelectric 1-D nanostructures for the energy harvesting applications","authors":"M. Chelu, H. Stroescu, J. Moreno, M. Anastasescu, S. Preda, M. Gartner, C. Moldovan, M. Gheorghe","doi":"10.1109/SMICND.2019.8923647","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923647","url":null,"abstract":"The paper describes the growth of ZnO nanowires (NWs) on different metal substrates using a spinning seed layer followed by hydrothermal bath method. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) confirms the high quality of grown nanowires. The piezoelectric performance of the fabricated ZnO NWs based devices is measured under a force of 10 N and a test frequency within the range of 35- 110 Hz. Our results demonstrate the potential application of the obtained structures in a piezoelectric nanogenerator for mechanical energy harvesting.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125572666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Depth profiling of GaN by High Resolution X-ray diffraction 氮化镓的高分辨率x射线衍射深度剖面
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923643
C. Romanițan
{"title":"Depth profiling of GaN by High Resolution X-ray diffraction","authors":"C. Romanițan","doi":"10.1109/SMICND.2019.8923643","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923643","url":null,"abstract":"We present an investigation of the edge and screw threading dislocation densities in GaN- heteroepitaxial layers with different thicknesses grown on sapphire substrate using X-ray diffraction. Taking into account the finite penetration depth nature of the X-rays, we obtained depth profiles of threading dislocations along the layer thickness and attributed the observed features with annihilation centers.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126765216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CAS 2019 Author Index CAS 2019作者索引
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923908
{"title":"CAS 2019 Author Index","authors":"","doi":"10.1109/smicnd.2019.8923908","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923908","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115112831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro- and Nanophotonics 微观和纳米光子学
2019 International Semiconductor Conference (CAS) Pub Date : 1900-01-01 DOI: 10.1109/smicnd.2019.8923760
G. Salt, H. Herzig
{"title":"Micro- and Nanophotonics","authors":"G. Salt, H. Herzig","doi":"10.1109/smicnd.2019.8923760","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923760","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127390218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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