Experimental Characteristics of Organic Transistor with Silver Gate

Abstract

The applications of nano-core materials with doped external shell by para-amino-benzoic acid to construct an organic transistor are presented. The transistor adopts a typical configuration of an organic transistor, but using point contacts as a pseudo-MOS transistor. The device is prepared by Ag deposition on a glass substrate, followed by dip coating depositions for the organic materials. The measured static characteristics revealed acceptor behavior of the active film, indicating the accumulation onset at negative gate voltage. At higher voltages, some oscillations are recorded in this device with silver gate.