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2019 International Semiconductor Conference (CAS)最新文献

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Interdigitated biosensor for D-serine detection, using gold nano-particles 用于d -丝氨酸检测的交叉指状生物传感器，采用金纳米颗粒
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923672
L. Draghiciu, C. Romanițan, C. Parvulescu, O. Tutunaru, R. Müller, T. Ignat
{"title":"Interdigitated biosensor for D-serine detection, using gold nano-particles","authors":"L. Draghiciu, C. Romanițan, C. Parvulescu, O. Tutunaru, R. Müller, T. Ignat","doi":"10.1109/SMICND.2019.8923672","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923672","url":null,"abstract":"Analysis of biomarkers are of real importance because their excess or deficiency in body are at the base of diseases. Dserine is an aminoacid acting as a key regulator of NMDAR (NMethyl-D-aspartate-type glutamate receptor) activity. NMDAR have a central role in numerous significant procedures involving the nervous system, like synaptic plasticity, brain progress, and learning. The level of D-serine in the body is associated with various neuronal diseases. Development of novel affinity biosensors has quickly expanded and are among the most sensitive analytical devices available, offering low limits of detection and broad linear response ranges. In this work we report the design of gold interdigitated electrode overlaid on the silicon (Si) substrate using conventional photolithography process and tested to be applicable as a biosensor to detect the level of d-serine. Integrating microfluidics with biosensors is of great research interest with the increasing development of lab-on-the chip and point-of-care devices.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129272719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A case study of 4 GHz proximity detector for smart crosswalks 用于智能人行横道的4ghz接近探测器的案例研究
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923619
C. Andriesei, George Aniţei, Daniel Condrea
{"title":"A case study of 4 GHz proximity detector for smart crosswalks","authors":"C. Andriesei, George Aniţei, Daniel Condrea","doi":"10.1109/SMICND.2019.8923619","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923619","url":null,"abstract":"A 4 GHz line-of-sight propagation scenario is tested experimentally to assess the implementation of a proximity detector for smart city applications, smart crosswalk in particular. Preliminary results indicate that 4 GHz frequency could be used to monitor the presence of people, the received power decreasing sufficiently enough to make a trustful decision that could trigger the traffic lights. Microstrip antenna arrays are used to increase the radiative efficiency and a maximum distance of 2 meters is chosen for experiments, corresponding to the width of many crosswalks existent around Romanian high schools.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133210200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Automated Segmentation of Pigmented Skin Lesions Images for Smartphone Applications 用于智能手机应用的色素皮肤病变图像的自动分割
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923938
I. Pirnog, I. Marcu, C. Oprea
{"title":"Automated Segmentation of Pigmented Skin Lesions Images for Smartphone Applications","authors":"I. Pirnog, I. Marcu, C. Oprea","doi":"10.1109/SMICND.2019.8923938","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923938","url":null,"abstract":"Automated prescreening of pigmented skin lesions is crucial for melanoma early detection and cure solution identification. All computer aided methods and applications use image segmentation for pigmentary lesion extraction. State of the art segmentation methods offer good results for macroscopic skin lesion images captured standard cameras. The aim of this paper is to address the pigmented skin lesion segmentation issue for images captured in uncontrolled environment using smartphone cameras.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133189339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Use of 4H-SiC-based Diodes as Temperature Sensors 使用4h - sic基二极管作为温度传感器
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923696
F. D. Della Corte, G. Pangallo, S. Rao, R. Carotenuto, D. Iero, M. Merenda, F. Pezzimenti
{"title":"Use of 4H-SiC-based Diodes as Temperature Sensors","authors":"F. D. Della Corte, G. Pangallo, S. Rao, R. Carotenuto, D. Iero, M. Merenda, F. Pezzimenti","doi":"10.1109/SMICND.2019.8923696","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923696","url":null,"abstract":"The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental IV characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125711950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Calibration Methodology for a 3D Measurement System of Electromagnetic Radiation 电磁辐射三维测量系统的标定方法
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923831
A. Tulbure, Calin Petrascu, M. Vlădescu
{"title":"Calibration Methodology for a 3D Measurement System of Electromagnetic Radiation","authors":"A. Tulbure, Calin Petrascu, M. Vlădescu","doi":"10.1109/SMICND.2019.8923831","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923831","url":null,"abstract":"The proposed paper explains the calibration methodology of a high resolution 3D measurement system for electromagnetic radiations generated by a wireless power emitter, WPE. This system [1] consists of a CNC manipulator for the radiation transducer and an advanced board for its signal acquisition and processing, both managed by the computer applications.Moreover, the contribution focuses on describing the accuracy and traceability of the research applied to the entire measuring path, namely: geometric calibration of the 3D field sensor on the orthogonal axes, electronic amplifiers adjustment on each channel, the rms-to-dc converter calibration and the fmal ADC converter settings. Particularly, a large emphasis is put on the dc-voltage linearization corresponding to the measured field over its whole range, as well as to the field direction identification by comparing the phase between the input and output reference signals. Taking into account that a full measurement sequence contains approx 68 kpoints, the time-domain analysis has not been neglected, leading to the synchronization of sensor movement with filtering-capture, digital conversion and data recording.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124482072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Zinc Oxide concentration on the dielectric properties of 3D Printed Acrylonitrile Butadiene Styrene nanocomposites 氧化锌浓度对3D打印丙烯腈-丁二烯-苯乙烯纳米复合材料介电性能的影响
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923905
A. Maniadi, M. Vamvakaki, M. Petousis, N. Vidakis, M. Suchea, M. Sevastaki, Z. Viskadourakis, G. Kenanakis, E. Koudoumas
{"title":"Effect of Zinc Oxide concentration on the dielectric properties of 3D Printed Acrylonitrile Butadiene Styrene nanocomposites","authors":"A. Maniadi, M. Vamvakaki, M. Petousis, N. Vidakis, M. Suchea, M. Sevastaki, Z. Viskadourakis, G. Kenanakis, E. Koudoumas","doi":"10.1109/SMICND.2019.8923905","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923905","url":null,"abstract":"Nanocomposites, consisting of Acrylonitrile Butadiene Styrene (ABS) and ZnO of various concentrations were developed by dry mixing the nano filler with the matrix in powder form, followed by melt mixing in an extrusion system, fabrication of filaments and 3D printing of specimens. The effect of the ZnO content on the dielectric properties of the nanocomposite specimens was investigated and as shown, ZnO induces a reduction of the dielectric constant, a behavior that can be employed for tailoring the applicability of ABS in electrical applications.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"569 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121200255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
New Extraction Method of the Bipolar Transistor Model Parameters Used in Bandgap Type Voltage References 用于带隙型电压基准的双极晶体管模型参数提取新方法
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923885
Stefan Marinca, M. Bodea, Angelica Stiglet, Bogdan Baron
{"title":"New Extraction Method of the Bipolar Transistor Model Parameters Used in Bandgap Type Voltage References","authors":"Stefan Marinca, M. Bodea, Angelica Stiglet, Bogdan Baron","doi":"10.1109/smicnd.2019.8923885","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923885","url":null,"abstract":"A new extraction method of the critical model parameters affecting temperature variation of the bandgap type voltage reference is presented. According to the new method, the two model parameters describing the linear and non-linear temperature dependence of the bandgap type voltage references are extracted from the raw data of the reference voltage vs. temperature and not from direct measurements of the bipolar transistor.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117090211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CAS 2019 Cover Page CAS 2019封面
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923819
{"title":"CAS 2019 Cover Page","authors":"","doi":"10.1109/smicnd.2019.8923819","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923819","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"46 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128375481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CAS 2019 Foreword
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923959
{"title":"CAS 2019 Foreword","authors":"","doi":"10.1109/smicnd.2019.8923959","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923959","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125830423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nickel silicide compounds investigation obtained at low and high temperatures 低温和高温下硅化镍化合物的研究
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923820
R. Pascu, C. Romanițan, O. Tutunaru, F. Comanescu, M. Kusko, G. Pristavu, G. Brezeanu
{"title":"Nickel silicide compounds investigation obtained at low and high temperatures","authors":"R. Pascu, C. Romanițan, O. Tutunaru, F. Comanescu, M. Kusko, G. Pristavu, G. Brezeanu","doi":"10.1109/SMICND.2019.8923820","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923820","url":null,"abstract":"A Ni thin film (50 nm) was deposited on n-type Si (100) wafers and subsequently subjected to post-metallization annealing at two different ranges of temperatures: low temperature annealing, ranging from 300 to 400°C, with a step of 50°C and high temperature annealing ranging from 850 to 950°C, with a step of 50°C, respectively. All thermal processes have been performed in an inert atmosphere (Ar), to avoid Ni oxidation. In order to examine the morphology of the formed nickel silicide, scanning electron microscopy analyses have been performed both in cross section and top view mode. It was concluded that the surface of the analyzed samples becomes rougher and the nickel silicide thickness increases with the temperature annealing. Furthermore, a flatter nickel silicide/silicon interface is reported at higher temperature annealing. Additionally, X-ray diffraction and micro-Raman spectroscopy were used to obtain information about the compositional properties of the resulted nickel silicide compounds. It was demonstrated that, at low temperature annealing, the dominant phase for the nickel silicide is Ni2Si (more unreacted Ni), while at high temperature more Ni consumption is observed, the dominant phase being NiSi2.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128256065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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