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2019 International Semiconductor Conference (CAS)最新文献

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Analysis and design of a current mode buck converter with digitally controlled output voltage 输出电压数字控制的电流型降压变换器的分析与设计
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923781
Iordache Cosmin Alexandru, Bodea Mircea
{"title":"Analysis and design of a current mode buck converter with digitally controlled output voltage","authors":"Iordache Cosmin Alexandru, Bodea Mircea","doi":"10.1109/SMICND.2019.8923781","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923781","url":null,"abstract":"This paper presents the analysis and design of a current mode buck converter whose output voltage is set by a digital potentiometer programmed through an inter-integrated-circuit interface (PC). This converter can handle up to 300W output power, it has an input voltage of 48V and the output voltage ranging from 1. 5V up to 40 V with a mmimum output current of 7.5A.This converter has a high voltage, high efficiency, fixed frequency controller with programmable soft start, undervoltage lockout, current limit unaffected by duty cycle and internal high voltage regulator for its gate driver.This CMC buck converter was designed to be integrated in a computer controlled unit for electronic devices characterization (CCUEDC) [4] as an upgrade of the internal hysteretic buck converter. It can be also integrated in a highly efficient and versatile lab power supply or to be used to power LEDs devices.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130453624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement on Well Design and Operation of Potential Well Barrier Diodes 势阱势垒二极管的井设计和运行改进
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923974
M. Akura, Geoffrey Martin Dunn, Mohamed Missous
{"title":"Improvement on Well Design and Operation of Potential Well Barrier Diodes","authors":"M. Akura, Geoffrey Martin Dunn, Mohamed Missous","doi":"10.1109/smicnd.2019.8923974","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923974","url":null,"abstract":"The flexibility in design of the potential well in PWB diodes has shown promising prospects for zero-bias operation capability and improvements in the overall performance of the diode. We consider the right intrinsic region whilst regrading further the Ga4s well The performance of the diodes was measured and compared in terms of the turn-on voltage and curvature coefficient. We found that the turn on voltage of the diodes improves significantly with increases in the graded regions. At a current density of 0.5× 10-12 Amperes per meters square, the diodes with graded regions 0.01, 0.03 and 0.05 mircons have turn-on voltages of 0.85, 0.5 and 0. 38 Volts, while the curvature coefficient estimated at 0. 5V was respectively obtained to be 6. 4, 10. 3 and 20. 1 per volt.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131911967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microsensors and Microsystems 1 微传感器与微系统
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923776
{"title":"Microsensors and Microsystems 1","authors":"","doi":"10.1109/smicnd.2019.8923776","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923776","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"102 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130008312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and Theoretical Evidence of Photocurrent Amplification in Hybrid Material Based on Dibenzo-18-Crown-6 基于二苯并-18-冠-6的杂化材料光电流放大的实验和理论依据
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923973
Maria Lis, K. Pilarczyk, K. Szaciłowski
{"title":"Experimental and Theoretical Evidence of Photocurrent Amplification in Hybrid Material Based on Dibenzo-18-Crown-6","authors":"Maria Lis, K. Pilarczyk, K. Szaciłowski","doi":"10.1109/SMICND.2019.8923973","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923973","url":null,"abstract":"Theoretical and experimental studies on cation induced photocurrent amplification effect based on hybrid materials are presented. Ion sensing properties of dibenzo18-crown-6 ether and interactions between multi- walled carbon nanotubes and dibenzo18-crown-6 ether are stated as responsible for enhancing photocurrent intensity during photoelectrochemical measurements.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"500 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114070382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Frequency selective surfaces with hexagonal elements for millimeter waves applications 频率选择表面与六角形元素的毫米波应用
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923621
M. Banciu, D. C. Geambasu, L. Nedelcu, L. Trupina
{"title":"Frequency selective surfaces with hexagonal elements for millimeter waves applications","authors":"M. Banciu, D. C. Geambasu, L. Nedelcu, L. Trupina","doi":"10.1109/SMICND.2019.8923621","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923621","url":null,"abstract":"Numerical investigations on a frequency selective surface using metalized strips deposited on high resistive silicon in a millimeter waves are presented in this paper. High resistivity Si substrate was chosen due to the very good transparence in millimeter waves. For simulations, normal incidence of millimeter waves alongside Floquet modes and ports are considered. Dependence of the frequency response with the geometrical parameters of the unit cell is discussed.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127527580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and Theoretical Validation of Ga2O3 Thin Films Deposited by Physical Vapor Deposition 物理气相沉积Ga2O3薄膜的实验与理论验证
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923753
K. Lai, N. Badiei, Shuo Deng, P. Igić, Lijie Li
{"title":"Experimental and Theoretical Validation of Ga2O3 Thin Films Deposited by Physical Vapor Deposition","authors":"K. Lai, N. Badiei, Shuo Deng, P. Igić, Lijie Li","doi":"10.1109/SMICND.2019.8923753","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923753","url":null,"abstract":"In this work, we have shown that betagallium oxide (Ga2O3) thin films of differing thickness could be obtained by physical vapor deposition method, employing proper annealing conditions. These enable us to compare the variation of optical properties like transparency, band gap in these phases. Apart from these, our analysis of transmittance spectra of beta-Ga2O3 indicated the reduction of structural disorders (amorphous to crystalline) with increase in annealing temperature. The calculated band gap based on Density Functional Theory (DFT) for bulk beta-Ga2O3 thin films ~ 4.9 eV (direct) at room temperature is in excellent agreement with our experimentally measured values. This work will serve as design guidance for the new Ga2O3 based thin film electronics.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115663760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Singular value decomposition to determine the dynamics of a chaotic regime oscillator 奇异值分解确定混沌状态振荡器的动力学
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923805
O. Datcu, R. Hobincu, C. Macovei
{"title":"Singular value decomposition to determine the dynamics of a chaotic regime oscillator","authors":"O. Datcu, R. Hobincu, C. Macovei","doi":"10.1109/SMICND.2019.8923805","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923805","url":null,"abstract":"Targeting the hybrid analog-digital private communication field, this paper aims to estimate the parameters of an analog circuit model. An oscilloscope stores the samples of a voltage in a.csv file. The data series is processed using a digital signal technique the singular value decomposition. Singular values and corresponding right-eigenvectors are used to estimated the values of the parameters of the model characterizing the circuit that produced the measured output. The decomposition is performed using small windows of samples of the output of a jerk-type circuit from the literature and an averaging operation improves the estimation.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117084564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digital Filters for Sigma-Delta Modulation in Wireless Communications 无线通信中Sigma-Delta调制的数字滤波器
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923999
I. Pirnog, I. Marcu, A. Dragulinescu, C. Oprea
{"title":"Digital Filters for Sigma-Delta Modulation in Wireless Communications","authors":"I. Pirnog, I. Marcu, A. Dragulinescu, C. Oprea","doi":"10.1109/SMICND.2019.8923999","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923999","url":null,"abstract":"This paper presents the effect of digital filtering in a sigma-delta modulation (SDM) used in wireless communications. SDM is widely used in digital-to-analog conversion because it offers high signal to noise ratio and distortion rate and low power and costs. SDM uses oversampling and noise shaping in order to move quantization noise from the signal band end and to eliminate it through a low pass filtering process. A SDM based scheme was implemented in a wireless communications system. Simulations were performed for different oversampling rates, digital filter types and communications channels. Bit error rate (BER) was used to evaluate the performances of the system.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122865757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Robust pose estimation using Time-of-Flight imaging 基于飞行时间成像的鲁棒姿态估计
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923670
C. Oprea, I. Pirnog, I. Marcu, M. Udrea
{"title":"Robust pose estimation using Time-of-Flight imaging","authors":"C. Oprea, I. Pirnog, I. Marcu, M. Udrea","doi":"10.1109/SMICND.2019.8923670","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923670","url":null,"abstract":"We propose a computer vision algorithm for head pose estimation that is suitable for real time environments. Our solution is based on the depth information provided by a Time of Flight camera, image processing algorithms for facial landmarks detection and support vector machine classification. We study the effect of different factors including head pose angles, background reflective surfaces and computing duration. We identify an extended range of roll, yaw and pitch rotations angles for which the algorithm provides reliable estimates.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"322 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120892312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelling and Semiconductor Devices 建模和半导体器件
2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923879
{"title":"Modelling and Semiconductor Devices","authors":"","doi":"10.1109/smicnd.2019.8923879","DOIUrl":"https://doi.org/10.1109/smicnd.2019.8923879","url":null,"abstract":"","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133985703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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