C. Ravariu, D. Mihaiescu, D. Istrati, Alina Moroșan
{"title":"银栅有机晶体管的实验特性","authors":"C. Ravariu, D. Mihaiescu, D. Istrati, Alina Moroșan","doi":"10.1109/SMICND.2019.8923962","DOIUrl":null,"url":null,"abstract":"The applications of nano-core materials with doped external shell by para-amino-benzoic acid to construct an organic transistor are presented. The transistor adopts a typical configuration of an organic transistor, but using point contacts as a pseudo-MOS transistor. The device is prepared by Ag deposition on a glass substrate, followed by dip coating depositions for the organic materials. The measured static characteristics revealed acceptor behavior of the active film, indicating the accumulation onset at negative gate voltage. At higher voltages, some oscillations are recorded in this device with silver gate.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental Characteristics of Organic Transistor with Silver Gate\",\"authors\":\"C. Ravariu, D. Mihaiescu, D. Istrati, Alina Moroșan\",\"doi\":\"10.1109/SMICND.2019.8923962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The applications of nano-core materials with doped external shell by para-amino-benzoic acid to construct an organic transistor are presented. The transistor adopts a typical configuration of an organic transistor, but using point contacts as a pseudo-MOS transistor. The device is prepared by Ag deposition on a glass substrate, followed by dip coating depositions for the organic materials. The measured static characteristics revealed acceptor behavior of the active film, indicating the accumulation onset at negative gate voltage. At higher voltages, some oscillations are recorded in this device with silver gate.\",\"PeriodicalId\":151985,\"journal\":{\"name\":\"2019 International Semiconductor Conference (CAS)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2019.8923962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2019.8923962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental Characteristics of Organic Transistor with Silver Gate
The applications of nano-core materials with doped external shell by para-amino-benzoic acid to construct an organic transistor are presented. The transistor adopts a typical configuration of an organic transistor, but using point contacts as a pseudo-MOS transistor. The device is prepared by Ag deposition on a glass substrate, followed by dip coating depositions for the organic materials. The measured static characteristics revealed acceptor behavior of the active film, indicating the accumulation onset at negative gate voltage. At higher voltages, some oscillations are recorded in this device with silver gate.
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