Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)

Michele Spasaro, D. Zito
{"title":"Millimeter-Wave Integrated Silicon Devices: Active versus Passive — The Eternal Struggle Between Good and Evil : (Invited Paper)","authors":"Michele Spasaro, D. Zito","doi":"10.1109/SMICND.2019.8923669","DOIUrl":null,"url":null,"abstract":"With the extreme scaling, active devices in both CMOS and BiCMOS technologies have reached outstanding $f_{T}/f_{\\max}$, enabling an ever-increasing number of existing and emerging applications in the microwave and millimeter wave (mm-wave) frequency range. The increase in transistors $f_{T}/f_{\\max}$ has been so much significant that the performance of microwave and mm-wave ICs are limited mainly by losses in passive devices. In this paper, we address a discussion on qualitative and quantitative aspects that may help to further unveil the impact of such losses on the overall circuit performance and stimulate the adoption of effective loss-aware design methodologies. As example, we report the results related to the design of low power mm-wave low noise amplifiers (LNAs). Our results show how, in low power regime, the peformances of mm-wave LNAs are dominated by losses in passive components. We also show how loss-aware design methodologies can mitigate the performance degradation due to passives, resulting as an important tool to get the full potential out of the active devices available today.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2019.8923669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

With the extreme scaling, active devices in both CMOS and BiCMOS technologies have reached outstanding $f_{T}/f_{\max}$, enabling an ever-increasing number of existing and emerging applications in the microwave and millimeter wave (mm-wave) frequency range. The increase in transistors $f_{T}/f_{\max}$ has been so much significant that the performance of microwave and mm-wave ICs are limited mainly by losses in passive devices. In this paper, we address a discussion on qualitative and quantitative aspects that may help to further unveil the impact of such losses on the overall circuit performance and stimulate the adoption of effective loss-aware design methodologies. As example, we report the results related to the design of low power mm-wave low noise amplifiers (LNAs). Our results show how, in low power regime, the peformances of mm-wave LNAs are dominated by losses in passive components. We also show how loss-aware design methodologies can mitigate the performance degradation due to passives, resulting as an important tool to get the full potential out of the active devices available today.
毫米波集成硅器件:有源与无源——善与恶的永恒斗争(特邀论文)
随着极限缩放,CMOS和BiCMOS技术中的有源器件已达到出色的$f_{T}/f_{\max}$,使微波和毫米波(mm-wave)频率范围内的现有和新兴应用数量不断增加。晶体管f_{T}/f_{\max}$的增加是如此显著,以至于微波和毫米波集成电路的性能主要受到无源器件损耗的限制。在本文中,我们讨论了定性和定量方面的问题,这可能有助于进一步揭示这种损耗对整体电路性能的影响,并刺激采用有效的损耗感知设计方法。例如,我们报告了与低功率毫米波低噪声放大器(LNAs)设计相关的结果。我们的研究结果表明,在低功率状态下,毫米波lna的性能是如何由无源元件的损耗所主导的。我们还展示了损耗感知设计方法如何减轻由于无源而导致的性能下降,从而成为充分发挥现有有源设备潜力的重要工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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