2019 International Semiconductor Conference (CAS)最新文献_第2页

structural and opto-electrical analysis of Cu doped ZnO thin films by sol-gel method 溶胶-凝胶法制备Cu掺杂ZnO薄膜的结构和光电分析

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923995

A. Istrate, V. Dediu, I. Mihalache, C. Romanițan, O. Tutunaru

{"title":"structural and opto-electrical analysis of Cu doped ZnO thin films by sol-gel method","authors":"A. Istrate, V. Dediu, I. Mihalache, C. Romanițan, O. Tutunaru","doi":"10.1109/SMICND.2019.8923995","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923995","url":null,"abstract":"Copper-doped zinc oxide thinfilms, (1, 3,5 at. %) have been synthesized via sol-gel spin coating technique. Main objectives of the reported -work are to investigate the effect of copper doping on morphology, compositional, structure and on opto-electrical properties of ZnO thin films. To achieve the mentioned objectives, Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray (EDX), X- Ray Diffraction (XRD), UV-vis techniques and the current-voltage (I-V) measurements -were performed. SEM result show a porous morphology. The % Cu concentration, determined by EDX analysis, are 0.66%, 3.73% and 6.26% in good agreement with the Cu theoretical concentration. XRD analysis shows that the films are nanocrystalline zinc oxide with the wurtzite structure. From optical measurements, a significant decrease in average optical transmission from 93 to 76 % is observed for all doped samples and the band gap value decreased from 3.20 to 3.00 eV which are related to the presence of defects due to Cu incorporation. The resistivity value of 9.64Ω10-4 Ω-cm have been achieved -which is very promising in electronics for field effect transistors.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117180450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Workshop “Sensors and Integrated Systems for Security and Health Applications” “安全与健康应用的传感器和集成系统”研讨会

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923971

引用次数: 0

Comparison and Simulation study of Cylindrical GAA NWMBCFET for sub 5 nm 亚5nm圆柱形GAA NWMBCFET的比较与仿真研究

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8924024

S. A. Kumar, J. Pravin

引用次数: 10

Top-down method for lab-scale production of nanocrystals of active molecules: Formulation approach and selection of optimal process parameters 实验室规模生产活性分子纳米晶体的自上而下方法:配方方法和最佳工艺参数的选择

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923851

I. Nikolić, S. Savić, D. Randjelović, D. Lunter

{"title":"Top-down method for lab-scale production of nanocrystals of active molecules: Formulation approach and selection of optimal process parameters","authors":"I. Nikolić, S. Savić, D. Randjelović, D. Lunter","doi":"10.1109/SMICND.2019.8923851","DOIUrl":"https://doi.org/10.1109/SMICND.2019.8923851","url":null,"abstract":"Drug nanocrystals represent nanosized particles of a pharmaceutical active ingredient with an average diameter below 1000nm, commonly formulated as aqueous nanosuspensions with appropriate stabilizer. As the number of poorly soluble drugs is increasing, nanocrystals have become very interesting, due to the wide range of application possibilities. Curcumin was used as a model substance in this work. Even though it has many proven positive effects, due to its physicochemical issues, its possibilities have not been fully exploited. In this context, nanocrystals seem promising delivery systems. The main goal of this work was to select optimal conditions for the top-down method for curcumin nanosuspension production, and to perform a comprehensive characterization of selected samples using complementary methods: dynamic light scattering, polarization and atomic force microscopy, thermal analysis, antioxidant activity evaluation and release kinetics assessment. Nanosuspensions stabilized by polysorbate 80 and by combinations of polysorbate 80 and sucrose palmitate (4:1 and 2:1; curcumin:stabilizer=1:1) have shown good stability, with optimal milling time of 30min. Obtained nanocrystals were well defined, with average diameter below 200 nm, PDI was about 0.25, zeta potential was above |30| mV, and pH was around 5 for all formulations. Under selected experimental protocol, nanodispersions exhibited high antioxidant potential (IC50=0.12mg/ml). Significant differences in the release kinetics of curcumin from nanosuspensions compared to coarse dispersions was captured.","PeriodicalId":151985,"journal":{"name":"2019 International Semiconductor Conference (CAS)","volume":"58 30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128784176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High performance NIR photosensitive films of Ge nanoparticles in Si3 N4 氮化硅中锗纳米颗粒的高性能近红外光敏膜

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923942

I. Stavarache, P. Prepelita, I. Lalau, O. Cojocaru, V. Teodorescu, M. Ciurea

引用次数: 0

Archimedean Spiral Antenna with Coplanar Waveguide Feed 阿基米德螺旋天线与共面波导馈电

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/SMICND.2019.8923699

A. Bunea, D. Neculoiu, A. Avram, M. Iovea

引用次数: 1

CAS 2019 Title Page CAS 2019标题页

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923703

引用次数: 0

Nanomaterials and Sensors – Student Papers 纳米材料和传感器-学生论文

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923981

引用次数: 0

CAS 2019 Contents

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923717

引用次数: 0

Nanoscience and Nanoengineering 3 Posters 纳米科学与纳米工程3海报

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI: 10.1109/smicnd.2019.8923712

引用次数: 0