氮化硅中锗纳米颗粒的高性能近红外光敏膜

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI:10.1109/SMICND.2019.8923942

I. Stavarache, P. Prepelita, I. Lalau, O. Cojocaru, V. Teodorescu, M. Ciurea

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引用次数: 0

摘要

采用共溅射法，在300℃的温度下，在加热的Si和石英衬底上溅射了s$ i_{3}N_{4}$，得到了s$ i_{3}N_{4}$的非晶态Ge纳米颗粒薄膜。通过透射电子显微镜、电流-电压和光谱光电流研究了薄膜的结构和光电性能。光谱光电流与透射电镜结果相关。在光照下，电流比黑暗时高一个数量级。光电流谱在近红外波段变宽至0.97eV。测定了1v和0V时的内部量子效率值

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High performance NIR photosensitive films of Ge nanoparticles in Si3 N4

Films of amorphous Ge nanoparticles in S$i_{3}N_{4}$ on heated Si and quartz substrates at 300°c were obtained by co-sputtering Ge, and S$i_{3}N_{4}$. The films structure and photo-electrical behaviour were studied through transmission electron microscopy and, current- voltage and spectral photo-current investigations, respectively. The spectral photo-current were correlated with results obtained from transmission electron microscopy. Under illumination the current present a high increase with about one order of magnitude compared with the dark one. The photo-current spectra show a widening in near infrared to 0.97eV. Internal quantum efficiency values for-1V and 0V were determinedt

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2019 International Semiconductor Conference (CAS)

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