Comparison and Simulation study of Cylindrical GAA NWMBCFET for sub 5 nm

Abstract

In this paper, a cylindrical GAA NWFET (Gate All Around Nano Wire Field Effect Transistor) is compared with a cylindrical GAA NWMBCFET (Gate All Around Nano Wire Multi Bridge Channel Field Effect Transistor) for sub 5nm devices using TCAD (Technology Computer Aided Design) simulation tool. Four thin channels have been created in GAA NWMBCFET instead of one channel having equal distance between vertical and horizontal stacking. The device performance has been numerically evaluated using coupled Drift-diffusion (DD) method and Shockley-Read-Hall Recombination method (SRH). The compared transfer and output characteristics of GAA NWFET (Lg = 35nm) and GAA NWMBCFET (Lg = 5nm), GAA NWFET (Lg = 5nm) and GAA NWMBCFET (Lg = 5nm) have been reported. The inclusion of multi bridge channel in the device has increased its current drive because of the Ultra-Thin Body (UTB). It has been reported that the GAA structure has a good immunity to short channel effects and maintains the Electro Static Integrity.