单个ZnO纳米棒p-n结的均匀电阻开关

2019 International Semiconductor Conference (CAS) Pub Date : 2019-10-01 DOI:10.1109/smicnd.2019.8923637

S. Tiagulskyi, R. Yatskiv, H. Faitová, J. Vanis, J. Grym

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引用次数: 0

摘要

通过测量垂直取向的n-ZnO纳米棒在p-GaN衬底上的电流-电压特性，研究了其电学性能。利用纳米探针在扫描电子显微镜的高真空室中测量了电流-电压特性。观察到的电阻率变化归因于p-n结界面势垒的场致变化。

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Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions

Electrical properties of a single verticallyoriented n-ZnO nanorod on a p-GaN substrate are investigated by measuring their current-voltage characteristics. The current-voltage characteristics are measured using nanoprobe in the high vacuum chamber of a scanning electron microscope. The observed changes of the resistivity are attributed to the field induced change of the potential barrier at the p-n junction interface.

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2019 International Semiconductor Conference (CAS)

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