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CALCULATION OF THE SURFACE PROPERTIES OF MICROELECTRONICS MATERIALS USING THE MODEL OF COORDINATION MELTING OF A CRYSTAL 用晶体配位熔化模型计算微电子材料的表面性质
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2469.mmmsec-2021/57-59
V. Bokarev, G. Krasnikov
{"title":"CALCULATION OF THE SURFACE PROPERTIES OF MICROELECTRONICS MATERIALS USING THE MODEL OF COORDINATION MELTING OF A CRYSTAL","authors":"V. Bokarev, G. Krasnikov","doi":"10.29003/m2469.mmmsec-2021/57-59","DOIUrl":"https://doi.org/10.29003/m2469.mmmsec-2021/57-59","url":null,"abstract":"In this work, it is shown that the model of coordination crystal melting makes it possible to calculate the values of the specific surface energy of elementary substances and the surface melting temperature of metals, and also relates the anisotropy of the specific surface energy of a crystal with its crystal structure, electron work function, and adhesion work.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128454621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FUNDAMENTALLY NEW APPROACHES TO SOLVING THERMOPHYSICAL PROBLEMS IN THE FIELD OF NANOELECTRONICS 从根本上解决纳米电子学领域热物理问题的新方法
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2481.mmmsec-2021/92-94
V. Khvesyuk, A. Barinov, B. Liu, W. Qiao
{"title":"FUNDAMENTALLY NEW APPROACHES TO SOLVING THERMOPHYSICAL PROBLEMS IN THE FIELD OF NANOELECTRONICS","authors":"V. Khvesyuk, A. Barinov, B. Liu, W. Qiao","doi":"10.29003/m2481.mmmsec-2021/92-94","DOIUrl":"https://doi.org/10.29003/m2481.mmmsec-2021/92-94","url":null,"abstract":"The paper discusses current problems related to the heat transfer in solid-state nanostructures: the influence of real rough boundaries on the effective thermal conductivity and contact thermal resistance","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116124537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MULTI-SCALE SIMULATION OF MULTILAYER NANOGETEROSTRUCTURES BASED ON STRONTIUM FERROMOLYBDATE (SFMO) 基于钼铁酸锶(sfmo)多层纳米结构的多尺度模拟
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2468.mmmsec-2021/53-56
K. Abgaryan, D. Bazhanov, N. Sobolev
{"title":"MULTI-SCALE SIMULATION OF MULTILAYER NANOGETEROSTRUCTURES BASED ON STRONTIUM FERROMOLYBDATE (SFMO)","authors":"K. Abgaryan, D. Bazhanov, N. Sobolev","doi":"10.29003/m2468.mmmsec-2021/53-56","DOIUrl":"https://doi.org/10.29003/m2468.mmmsec-2021/53-56","url":null,"abstract":"The work is devoted to the development of multiscale approaches to modeling spintronic devices using multilayer nanostructures based on strontium ferromolybdate for a new generation of computing technology.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"131 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113980679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INVESTIGATION OF THE PHOTORESIST PROFILE IN SELF-ALIGNED DOUBLE PATTERNING PROCESS APPLYING MATHEMATICAL MODELING METHOD 应用数学建模方法研究自对准双模过程中的光刻胶轮廓
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2480.mmmsec-2021/89-91
E. Tikhonova, Yevgeny Gornev
{"title":"INVESTIGATION OF THE PHOTORESIST PROFILE IN SELF-ALIGNED DOUBLE PATTERNING PROCESS APPLYING MATHEMATICAL MODELING METHOD","authors":"E. Tikhonova, Yevgeny Gornev","doi":"10.29003/m2480.mmmsec-2021/89-91","DOIUrl":"https://doi.org/10.29003/m2480.mmmsec-2021/89-91","url":null,"abstract":"This paper describes a method that can improve the photoresist profile irregularity in self-aligned double patterning process using the Prolith software environment simulation. The new technique helps not only to find the weak points in the etching process, but also to improve the line width of the resulting elements.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131461286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD AND SPICE MODELING OF SILICON VLSI ELEMENTS TAKING INTO ACCOUNT FOR TEMPERATURE, RADIATION AND AGING EFFECTS 考虑温度、辐射和老化效应的硅vlsi元件的Tcad和spice建模
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2487.mmmsec-2021/112-116
K. Petrosyants
{"title":"TCAD AND SPICE MODELING OF SILICON VLSI ELEMENTS TAKING INTO ACCOUNT FOR TEMPERATURE, RADIATION AND AGING EFFECTS","authors":"K. Petrosyants","doi":"10.29003/m2487.mmmsec-2021/112-116","DOIUrl":"https://doi.org/10.29003/m2487.mmmsec-2021/112-116","url":null,"abstract":"RAD-THERM-AGING versions of TCAD and SPICE models have been developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account for various types of radiation effects, temperatures in the wide range of -260°C…+300°C and aging during long-term operation.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"857 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133596635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RECOVERING OF ANISOTROPIC THERMAL PROPERTIES IN PHASE-CHANGE MATERIALS USING DIRECT AND INVERSE MATHEMATICAL MODELLING 利用直接和逆数学模型恢复相变材料的各向异性热性能
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2473.mmmsec-2021/69-72
S. Markov
{"title":"RECOVERING OF ANISOTROPIC THERMAL PROPERTIES IN PHASE-CHANGE MATERIALS USING DIRECT AND INVERSE MATHEMATICAL MODELLING","authors":"S. Markov","doi":"10.29003/m2473.mmmsec-2021/69-72","DOIUrl":"https://doi.org/10.29003/m2473.mmmsec-2021/69-72","url":null,"abstract":"We present the results of applying the developed algorithms for direct and reverse mathematical modelling to calculate the effective thermal conductivity tensor in samples of phase-change materials.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130025567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SIMULATION OF REVERSE CURRENT RECOVERY TIME MEASURING DEVISE 反向电流恢复时间测量装置的仿真
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2470.mmmsec-2021/60-62
V. Kirilov, Ivan Kobeleva, Svetlana Schemerov
{"title":"SIMULATION OF REVERSE CURRENT RECOVERY TIME MEASURING DEVISE","authors":"V. Kirilov, Ivan Kobeleva, Svetlana Schemerov","doi":"10.29003/m2470.mmmsec-2021/60-62","DOIUrl":"https://doi.org/10.29003/m2470.mmmsec-2021/60-62","url":null,"abstract":"In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"56 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126041823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PARAMETRIC IDENTIFICATION OF RGL POTENTIAL FOR MOLECULAR DYNAMIC SIMULATION 分子动力学模拟中RGL势的参数辨识
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2472.mmmsec-2021/66-69
Boris Ksemidov, Artem Aksentiev, K. Abgaryan, D. Bazhanov
{"title":"PARAMETRIC IDENTIFICATION OF RGL POTENTIAL FOR MOLECULAR DYNAMIC SIMULATION","authors":"Boris Ksemidov, Artem Aksentiev, K. Abgaryan, D. Bazhanov","doi":"10.29003/m2472.mmmsec-2021/66-69","DOIUrl":"https://doi.org/10.29003/m2472.mmmsec-2021/66-69","url":null,"abstract":"The paper considers approaches to solving the problem of identifying the parameters of the RGL potential applied to modeling the processes of interaction of metals with a surface.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117086763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INVESTIGATION OF THE POSSIBILITIES OF USING VARIOUS INDUSTRIAL EXTRACTORS TO DETERMINE THE SPICE MODEL PARAMETERS OF SUBMICRON MOSFETS IN THE TEMPERATURE RANGE UP TO +300°C 研究了在高达+300°c的温度范围内，使用各种工业萃取器确定亚微米颗粒的香料模型参数的可能性
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2488.mmmsec-2021/117-120
K. Petrosyants, M. Ismail-Zade, L. Sambursky
{"title":"INVESTIGATION OF THE POSSIBILITIES OF USING VARIOUS INDUSTRIAL EXTRACTORS TO DETERMINE THE SPICE MODEL PARAMETERS OF SUBMICRON MOSFETS IN THE TEMPERATURE RANGE UP TO +300°C","authors":"K. Petrosyants, M. Ismail-Zade, L. Sambursky","doi":"10.29003/m2488.mmmsec-2021/117-120","DOIUrl":"https://doi.org/10.29003/m2488.mmmsec-2021/117-120","url":null,"abstract":"The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115415706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MAGNETIC FIELD SENSING AND ENERGY HARVESTING WITH MAGNETOELECTRIC BIDOMAIN LINBO3-BASED COMPOSITES 磁电双畴linbo3基复合材料的磁场传感和能量收集
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2465.mmmsec-2021/46-47
N. Sobolev, A. Turutin, J. Vidal, I. Kubasov, A. Kislyuk, S. Kobeleva, D. Kiselev, A. Bykov, A. Temirov, R. Zhukov, M. Malinkovich, Y. Parkhomenko, A. Kholkin
{"title":"MAGNETIC FIELD SENSING AND ENERGY HARVESTING WITH MAGNETOELECTRIC BIDOMAIN LINBO3-BASED COMPOSITES","authors":"N. Sobolev, A. Turutin, J. Vidal, I. Kubasov, A. Kislyuk, S. Kobeleva, D. Kiselev, A. Bykov, A. Temirov, R. Zhukov, M. Malinkovich, Y. Parkhomenko, A. Kholkin","doi":"10.29003/m2465.mmmsec-2021/46-47","DOIUrl":"https://doi.org/10.29003/m2465.mmmsec-2021/46-47","url":null,"abstract":"","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126846830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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