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INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE 基于氧化铪的reram结构中电阻开关的物理原理研究
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2491.mmmsec-2021/130-132
E. Ganykina, Asrar Rezvanov, Yevgeny Gornev
{"title":"INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE","authors":"E. Ganykina, Asrar Rezvanov, Yevgeny Gornev","doi":"10.29003/m2491.mmmsec-2021/130-132","DOIUrl":"https://doi.org/10.29003/m2491.mmmsec-2021/130-132","url":null,"abstract":"In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130868817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ATOMIC STRUCTURE OF A SINGLE STEP AND DYNAMICS OF Sn ADATOMS ON THE Si(111)- v3 ? v3-Sn SURFACE Si(111)- v3上的单台阶原子结构和Sn原子动力学?v3-Sn表面
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2486.mmmsec-2021/108-111
R. Zhachuk, D. Rogilo, A. Petrov, D. Sheglov, A. Latyshev, F. Ronci, S. Colonna
{"title":"ATOMIC STRUCTURE OF A SINGLE STEP AND DYNAMICS OF Sn ADATOMS ON THE Si(111)- v3 ? v3-Sn SURFACE","authors":"R. Zhachuk, D. Rogilo, A. Petrov, D. Sheglov, A. Latyshev, F. Ronci, S. Colonna","doi":"10.29003/m2486.mmmsec-2021/108-111","DOIUrl":"https://doi.org/10.29003/m2486.mmmsec-2021/108-111","url":null,"abstract":"The atomic structure of single steps on the Si(111)- 3 3 ? -Sn surface and the dynamics of Sn adatoms in the vicinity of these steps were studied. The work was performed using scanning tunneling microscopy (STM) and ab initio calculations based on the density functional theory. The atomic structure model of the single steps consisting of Sn atomic chains along the steps was developed. This structure leads to the formation of potential double-wells near the steps acting as traps for Sn atoms and explains the fluctuating tunneling current recorded in these areas.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114352917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ANALYSIS AND COMPARISON OF DIFFERENT APPROACHES TO THE PROBLEM OF MEMRISTOR MODEL PARAMETERS EXTRACTION 不同方法对记忆电阻模型参数提取问题的分析与比较
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2494.mmmsec-2021/140-142
Y. Shamin, D. Zhevnenko, Fedor Meschaninov, V. Kozhevnikov, Yevgeny Gornev
{"title":"ANALYSIS AND COMPARISON OF DIFFERENT APPROACHES TO THE PROBLEM OF MEMRISTOR MODEL PARAMETERS EXTRACTION","authors":"Y. Shamin, D. Zhevnenko, Fedor Meschaninov, V. Kozhevnikov, Yevgeny Gornev","doi":"10.29003/m2494.mmmsec-2021/140-142","DOIUrl":"https://doi.org/10.29003/m2494.mmmsec-2021/140-142","url":null,"abstract":"The work is devoted to the analysis of various approaches to the problem of the empirical memristor model parameters extraction. A description of the peculiarities of the extraction process is given, and an original version of the extraction algorithm is proposed. The proposed algorithm is compared with other considered ones.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121182611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DETERMINATION OF ULTRA-SMALL DEVIATIONS FROM STOICHIOMETRY BY EQUILIBRIUM VAPOR PHASE COMPOSITION OF WIDE BEND GAP А2 В6 SEMICONDUCTORS 通过宽弯曲间隙А2 В6半导体平衡气相组成测定化学计量学的超小偏差
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2471.mmmsec-2021/63-65
S. Kobeleva
{"title":"DETERMINATION OF ULTRA-SMALL DEVIATIONS FROM STOICHIOMETRY BY EQUILIBRIUM VAPOR PHASE COMPOSITION OF WIDE BEND GAP А2 В6 SEMICONDUCTORS","authors":"S. Kobeleva","doi":"10.29003/m2471.mmmsec-2021/63-65","DOIUrl":"https://doi.org/10.29003/m2471.mmmsec-2021/63-65","url":null,"abstract":"The paper considers the possibility of determining the deviation from the stoichiometry in cadmium and zinc chalcogenides by the composition of the equilibrium vapor phase. The conditions for the evaporation are considered. It is shown that if the ratio of the of the solid and vapor phases volumes is more then 120, it is possible to determine the deviation from stoichiometry at the order of magnitude 1014 cm-3.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123054826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AB INITIO CALCULATION OF ADSORPTION POSITION EFFECT ON MAGNETIZATION REDISTRIBUTION IN P-DOPED SILICENE p掺杂硅烯中吸附位置对磁化重分布影响的从头计算
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2490.mmmsec-2021/124-127
A. Prokhorenko, Yu.P. Gnidenko, Y. Chibisov, Y. Chibisova
{"title":"AB INITIO CALCULATION OF ADSORPTION POSITION EFFECT ON MAGNETIZATION REDISTRIBUTION IN P-DOPED SILICENE","authors":"A. Prokhorenko, Yu.P. Gnidenko, Y. Chibisov, Y. Chibisova","doi":"10.29003/m2490.mmmsec-2021/124-127","DOIUrl":"https://doi.org/10.29003/m2490.mmmsec-2021/124-127","url":null,"abstract":"The behavior (substitution and adsorption) of a phosphorus atom on the surface of silicene is studied using quantum mechanical calculations. The most favorable positions, binding energy and activation of the phosphorus diffusion barrier have been established. The change in the local magnetic moment of the phosphorus atom is described depending on its position and the position of the surrounding silicon elements.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122452988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SELF-TIMED CIRCUITS AS A BASIS FOR DEVELOPING NEXT GENERATION HIGH-RELIABLE HIGH-PERFORMANCE COMPUTERS 自定时电路是开发下一代高可靠高性能计算机的基础
Mathematical modeling in materials science of electronic component Pub Date : 2020-10-16 DOI: 10.29003/m1535.mmmsec-2020/114-116
A. Zatsarinny, Y. Stepchenkov, Y. Diachenko, Y. Rogdestvenski
{"title":"SELF-TIMED CIRCUITS AS A BASIS FOR DEVELOPING NEXT GENERATION HIGH-RELIABLE HIGH-PERFORMANCE COMPUTERS","authors":"A. Zatsarinny, Y. Stepchenkov, Y. Diachenko, Y. Rogdestvenski","doi":"10.29003/m1535.mmmsec-2020/114-116","DOIUrl":"https://doi.org/10.29003/m1535.mmmsec-2020/114-116","url":null,"abstract":"The paper proposes design and circuitry solutions for the implementation of high-performance next generation computers. They are based on self-timed circuit design methodology and provide an increase in the tolerance of computing systems to soft errors resulting from induced noises and radiation exposure.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129790425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DETERMINATION OF THE INITIAL GUESS FOR THE PROBLEM OF MEMRISTOR MODEL PARAMETERS EXTRACTION USING MACHINE LEARNING ALGORITHMS 用机器学习算法确定记忆电阻器模型参数提取问题的初始猜测
Mathematical modeling in materials science of electronic component Pub Date : 2020-10-16 DOI: 10.29003/m1539.mmmsec-2020/127-130
E. Shamin, D. Zhevnenko, F. Meshchaninov, V. Kozhevnikov, E. Gornev
{"title":"DETERMINATION OF THE INITIAL GUESS FOR THE PROBLEM OF MEMRISTOR MODEL PARAMETERS EXTRACTION USING MACHINE LEARNING ALGORITHMS","authors":"E. Shamin, D. Zhevnenko, F. Meshchaninov, V. Kozhevnikov, E. Gornev","doi":"10.29003/m1539.mmmsec-2020/127-130","DOIUrl":"https://doi.org/10.29003/m1539.mmmsec-2020/127-130","url":null,"abstract":"The focus of this work is on the algorithm of extraction of parameters of the memristor model from the experimentally obtained current-voltage characteristics. The problem of finding the initial guess for this algorithm based on current-voltage characteristic features is stated and solved by means of machine learning algorithms.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121069119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INVESTIGATION OF THERMAL EFFECTS IN HfO2 RRAM STRUCTURES DURING THE RESET PROCESS 重设过程中HfO2 RRAM结构的热效应研究
Mathematical modeling in materials science of electronic component Pub Date : 2020-09-09 DOI: 10.29003/m1540.mmmsec-2020/131-133
E. Ganykina, E. Gornev, A. Rezvanov
{"title":"INVESTIGATION OF THERMAL EFFECTS IN HfO2 RRAM STRUCTURES DURING THE RESET PROCESS","authors":"E. Ganykina, E. Gornev, A. Rezvanov","doi":"10.29003/m1540.mmmsec-2020/131-133","DOIUrl":"https://doi.org/10.29003/m1540.mmmsec-2020/131-133","url":null,"abstract":"In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128140067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
APPLICATION OF MACHINE LEARNING ALGORITHMS FOR MODELING THE CURRENT-VOLTAGE CHARACTERISTIC OF A MEMRISTOR 机器学习算法在忆阻器电流-电压特性建模中的应用
Mathematical modeling in materials science of electronic component Pub Date : 2019-10-16 DOI: 10.29003/m1541.mmmsec-2020/133-136
A. Ereshchenko
{"title":"APPLICATION OF MACHINE LEARNING ALGORITHMS FOR MODELING THE CURRENT-VOLTAGE CHARACTERISTIC OF A MEMRISTOR","authors":"A. Ereshchenko","doi":"10.29003/m1541.mmmsec-2020/133-136","DOIUrl":"https://doi.org/10.29003/m1541.mmmsec-2020/133-136","url":null,"abstract":"The goal of this work is to explore the possibility of using machine learning algorithms for modeling the current-voltage characteristic of a memristor, using modeling of HfO2 and TiO2 based memristors as an example. The possibility of combining several mathematical models based on the predictions of individual models is investigated. The results obtained using the combined model are compared with the predictions of individual models and experimental data.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130040808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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