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SIMULATION OF SINGLE CRYSTAL ONE DIMENSIONAL ZnO RODS ARRAY GROWTH PROCESS 单晶一维ZnO棒阵列生长过程的模拟
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2497.mmmsec-2021/150-151
A. Sharapov, I. Matyushkin
{"title":"SIMULATION OF SINGLE CRYSTAL ONE DIMENSIONAL ZnO RODS ARRAY GROWTH PROCESS","authors":"A. Sharapov, I. Matyushkin","doi":"10.29003/m2497.mmmsec-2021/150-151","DOIUrl":"https://doi.org/10.29003/m2497.mmmsec-2021/150-151","url":null,"abstract":"In this work, the formation of zinc oxide arrows by gas-phase growth on the surface of silicon oxide is simulated.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133362712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SIMULATION OF FATIGUE CHARACTERISTICS OF A COMPOSITE MATERIAL USING COMSOL MULTIPHYSICS SOFTWARE 利用comsol多物理场软件模拟复合材料的疲劳特性
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2495.mmmsec-2021/144-146
Yulia A. Mochalova, K. Abgaryan
{"title":"SIMULATION OF FATIGUE CHARACTERISTICS OF A COMPOSITE MATERIAL USING COMSOL MULTIPHYSICS SOFTWARE","authors":"Yulia A. Mochalova, K. Abgaryan","doi":"10.29003/m2495.mmmsec-2021/144-146","DOIUrl":"https://doi.org/10.29003/m2495.mmmsec-2021/144-146","url":null,"abstract":"The paper reviews the capabilities of modeling composite materials using the COMSOL software product","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114204428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaN/GaN HEMT TRAP CHARACTERISTIC FREQUENCY DEPENDENCE ON TEMPERATURE AND ITS IMPACT ON THE RF POWER AMPLIFIER LINEARIZABILITY GaN/GaN HEMT阱特性频率对温度的依赖及其对射频功率放大器线性化性能的影响
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2484.mmmsec-2021/104-107
João L. Gomes, L. Nunes, J. Pedro
{"title":"AlGaN/GaN HEMT TRAP CHARACTERISTIC FREQUENCY DEPENDENCE ON TEMPERATURE AND ITS IMPACT ON THE RF POWER AMPLIFIER LINEARIZABILITY","authors":"João L. Gomes, L. Nunes, J. Pedro","doi":"10.29003/m2484.mmmsec-2021/104-107","DOIUrl":"https://doi.org/10.29003/m2484.mmmsec-2021/104-107","url":null,"abstract":"This paper presents a study of the linearizability of AlGaN/GaN HEMT based RF power amplifiers, RFPAs, and its relation with the active device trap activation energy. Based on the theory of thermally activated traps and on the experimental determination of the trap activation energy, we could show that despite different devices may exhibit traps with the same emission timeconstant at room temperature, their characteristic frequency may change significantly under nominal operation because of their temperature rise. And this was found to be key to explain the distinct linearizability performance of the tested devices because different stimulus dynamics excite the long-term memory effects imposed by traps with sensible different levels.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123806369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ANALYSIS OF THE DETAILS OF THE IMPLEMENTATION OF APPLICATION PROGRAMMING INTERFACE AND USER INTERFACE FOR MANAGING MODELS OF NEUROMORPHIC COMPUTING SYSTEMS 分析了神经形态计算系统管理模型的应用程序编程接口和用户界面的实现细节
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2462.mmmsec-2021/34-37
Vasily Scherbakov
{"title":"ANALYSIS OF THE DETAILS OF THE IMPLEMENTATION OF APPLICATION PROGRAMMING INTERFACE AND USER INTERFACE FOR MANAGING MODELS OF NEUROMORPHIC COMPUTING SYSTEMS","authors":"Vasily Scherbakov","doi":"10.29003/m2462.mmmsec-2021/34-37","DOIUrl":"https://doi.org/10.29003/m2462.mmmsec-2021/34-37","url":null,"abstract":"The paper discusses the main aspects of the practical implementation of software and user interfaces for managing models of neuromorphic computing systems.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116256176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CONSTRUCTION OF NEURAL NETWORK MODEL FOR STUDYING OF CRYSTAL STRUCTURES PROPERTIES 构建用于晶体结构性质研究的神经网络模型
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2461.mmmsec-2021/31-34
O. Uvarova, S. Uvarov
{"title":"CONSTRUCTION OF NEURAL NETWORK MODEL FOR STUDYING OF CRYSTAL STRUCTURES PROPERTIES","authors":"O. Uvarova, S. Uvarov","doi":"10.29003/m2461.mmmsec-2021/31-34","DOIUrl":"https://doi.org/10.29003/m2461.mmmsec-2021/31-34","url":null,"abstract":"The paper considers a mechanism for constructing a model based on artificial neural network for obtaining the values of the cohesive energy of a system of atoms. Cohesive energy allows for calculation of total energy of system. It is one of the most important characteristics of a structure. A computational experiment is carried out for one-component crystal structures of Si, Ge and C.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114865273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION) 退火过程中砷化镓表面起伏演化特征(蒙特卡罗模拟)
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2482.mmmsec-2021/95-98
N. Shwartz, A. Spirina
{"title":"FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION)","authors":"N. Shwartz, A. Spirina","doi":"10.29003/m2482.mmmsec-2021/95-98","DOIUrl":"https://doi.org/10.29003/m2482.mmmsec-2021/95-98","url":null,"abstract":"In this work, simulation of high-temperature annealing of GaAs (111) substrates has been carried out. The dependences of the substrate morphological transformations on the temperature and the presence of surface defects are analyzed.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124289732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MATHEMATICAL MODELING OF THE CRYSTAL STRUCTURE OF PEROVSKITE-LIKE MATERIALS 类钙钛矿材料晶体结构的数学建模
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2479.mmmsec-2021/86-88
P. Sechenykh
{"title":"MATHEMATICAL MODELING OF THE CRYSTAL STRUCTURE OF PEROVSKITE-LIKE MATERIALS","authors":"P. Sechenykh","doi":"10.29003/m2479.mmmsec-2021/86-88","DOIUrl":"https://doi.org/10.29003/m2479.mmmsec-2021/86-88","url":null,"abstract":"The paper presents the calculation of the metric parameters of crystalline compounds according to a given chemical formula and a space symmetry group. The structures of perovskite and double perovskite are considered.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125266318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INVESTIGATION OF THE SEGREGATION OF NICKEL IMPURITIES NEAR THE BOUNDARIES OF STRUCTURAL DEFECTS IN LSNT PEROVSKITE BY THE METHOD OF AB INITIO MOLECULAR DYNAMICS 用从头算分子动力学方法研究LSNT钙钛矿结构缺陷边界附近镍杂质的偏析
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2496.mmmsec-2021/146-150
A. Chistyakova, D. Bazhanov
{"title":"INVESTIGATION OF THE SEGREGATION OF NICKEL IMPURITIES NEAR THE BOUNDARIES OF STRUCTURAL DEFECTS IN LSNT PEROVSKITE BY THE METHOD OF AB INITIO MOLECULAR DYNAMICS","authors":"A. Chistyakova, D. Bazhanov","doi":"10.29003/m2496.mmmsec-2021/146-150","DOIUrl":"https://doi.org/10.29003/m2496.mmmsec-2021/146-150","url":null,"abstract":"","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133375249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
METHODS AND ALGORITHMS FOR PARALLEL CALCULATIONS USING VIRTUALIZATION TECHNOLOGIES IN MATERIALS SCIENCE PROBLEMS 材料科学问题中使用虚拟化技术的并行计算方法和算法
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2460.mmmsec-2021/26-30
V. Kondrashev, S. Denisov
{"title":"METHODS AND ALGORITHMS FOR PARALLEL CALCULATIONS USING VIRTUALIZATION TECHNOLOGIES IN MATERIALS SCIENCE PROBLEMS","authors":"V. Kondrashev, S. Denisov","doi":"10.29003/m2460.mmmsec-2021/26-30","DOIUrl":"https://doi.org/10.29003/m2460.mmmsec-2021/26-30","url":null,"abstract":"The paper discusses methods and algorithms for the provision of high-performance computing resources in multicomputer systems in a shared mode for fundamental and applied research in the field of materials science. Approaches are proposed for the application of applied integrated software environments (frameworks) designed to solve material science problems using virtualization and parallel computing technologies.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124231241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EVALUATION OF THE INFLUENCE OF FINFET STRUCTURE PARAMETERS ON ELECTRICAL CHARACTERISTICS BY TCAD 用tcad评估翅片结构参数对电学特性的影响
Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI: 10.29003/m2489.mmmsec-2021/120-123
K. Petrosyants, D. Silkin, Dmitry Popov
{"title":"EVALUATION OF THE INFLUENCE OF FINFET STRUCTURE PARAMETERS ON ELECTRICAL CHARACTERISTICS BY TCAD","authors":"K. Petrosyants, D. Silkin, Dmitry Popov","doi":"10.29003/m2489.mmmsec-2021/120-123","DOIUrl":"https://doi.org/10.29003/m2489.mmmsec-2021/120-123","url":null,"abstract":"In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125884725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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