FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION)

Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI:10.29003/m2482.mmmsec-2021/95-98

N. Shwartz, A. Spirina

引用次数: 0

Abstract

In this work, simulation of high-temperature annealing of GaAs (111) substrates has been carried out. The dependences of the substrate morphological transformations on the temperature and the presence of surface defects are analyzed.

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退火过程中砷化镓表面起伏演化特征(蒙特卡罗模拟)

本文对GaAs(111)衬底的高温退火过程进行了模拟。分析了衬底形貌变化对温度和表面缺陷的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical modeling in materials science of electronic component

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