INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE

Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI:10.29003/m2491.mmmsec-2021/130-132

E. Ganykina, Asrar Rezvanov, Yevgeny Gornev

引用次数: 0

Abstract

In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.

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基于氧化铪的reram结构中电阻开关的物理原理研究

本文研究了Au/Ti/HfO2/Au/Si忆阻器中电阻开关的物理原理，包括氧离子输运、传热和电流流过结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical modeling in materials science of electronic component

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