{"title":"基于氧化铪的reram结构中电阻开关的物理原理研究","authors":"E. Ganykina, Asrar Rezvanov, Yevgeny Gornev","doi":"10.29003/m2491.mmmsec-2021/130-132","DOIUrl":null,"url":null,"abstract":"In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE\",\"authors\":\"E. Ganykina, Asrar Rezvanov, Yevgeny Gornev\",\"doi\":\"10.29003/m2491.mmmsec-2021/130-132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m2491.mmmsec-2021/130-132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m2491.mmmsec-2021/130-132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
INVESTIGATION OF PHYSICAL PRINCIPLES OF RESISTIVE SWITCHING IN RERAM STRUCTURES BASED ON HAFNIUM OXIDE
In this paper, the physical principles of resistive switching in the Au/Ti/HfO2/Au/Si memristor are investigated, including oxygen ions transport, heat transfer and electric current flow through the structure.
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