Si(111)- v3上的单台阶原子结构和Sn原子动力学?v3-Sn表面

R. Zhachuk, D. Rogilo, A. Petrov, D. Sheglov, A. Latyshev, F. Ronci, S. Colonna
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引用次数: 0

摘要

Si(111)- 333 ?研究了这些步骤附近的-Sn表面和Sn吸附原子的动力学。这项工作是利用扫描隧道显微镜(STM)和基于密度泛函理论的从头计算完成的。建立了沿台阶由锡原子链组成的单台阶的原子结构模型。这种结构导致在台阶附近形成潜在的双阱,作为锡原子的陷阱,并解释了在这些区域记录的波动隧道电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ATOMIC STRUCTURE OF A SINGLE STEP AND DYNAMICS OF Sn ADATOMS ON THE Si(111)- v3 ? v3-Sn SURFACE
The atomic structure of single steps on the Si(111)- 3 3 ? -Sn surface and the dynamics of Sn adatoms in the vicinity of these steps were studied. The work was performed using scanning tunneling microscopy (STM) and ab initio calculations based on the density functional theory. The atomic structure model of the single steps consisting of Sn atomic chains along the steps was developed. This structure leads to the formation of potential double-wells near the steps acting as traps for Sn atoms and explains the fluctuating tunneling current recorded in these areas.
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