{"title":"重设过程中HfO2 RRAM结构的热效应研究","authors":"E. Ganykina, E. Gornev, A. Rezvanov","doi":"10.29003/m1540.mmmsec-2020/131-133","DOIUrl":null,"url":null,"abstract":"In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"INVESTIGATION OF THERMAL EFFECTS IN HfO2 RRAM STRUCTURES DURING THE RESET PROCESS\",\"authors\":\"E. Ganykina, E. Gornev, A. Rezvanov\",\"doi\":\"10.29003/m1540.mmmsec-2020/131-133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m1540.mmmsec-2020/131-133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m1540.mmmsec-2020/131-133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
INVESTIGATION OF THERMAL EFFECTS IN HfO2 RRAM STRUCTURES DURING THE RESET PROCESS
In this paper, the formation and rupture of a conducting filament in the Hf/HfO2/TiN structure are investigated. Theoretical consideration of the thermal effects occurring during the RESET process is covered. The analysis of the formation and rupture of a filament in an amorphous HfO2 layer is carried out. The introduction of the thin Al2O3 layer into the Hf/HfO2/TiN structure is also considered
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