TCAD AND SPICE MODELING OF SILICON VLSI ELEMENTS TAKING INTO ACCOUNT FOR TEMPERATURE, RADIATION AND AGING EFFECTS

Abstract

RAD-THERM-AGING versions of TCAD and SPICE models have been developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account for various types of radiation effects, temperatures in the wide range of -260°C…+300°C and aging during long-term operation.