{"title":"SIMULATION OF REVERSE CURRENT RECOVERY TIME MEASURING DEVISE","authors":"V. Kirilov, Ivan Kobeleva, Svetlana Schemerov","doi":"10.29003/m2470.mmmsec-2021/60-62","DOIUrl":null,"url":null,"abstract":"In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"56 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m2470.mmmsec-2021/60-62","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.