反向电流恢复时间测量装置的仿真

Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI:10.29003/m2470.mmmsec-2021/60-62

V. Kirilov, Ivan Kobeleva, Svetlana Schemerov

{"title":"反向电流恢复时间测量装置的仿真","authors":"V. Kirilov, Ivan Kobeleva, Svetlana Schemerov","doi":"10.29003/m2470.mmmsec-2021/60-62","DOIUrl":null,"url":null,"abstract":"In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"56 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SIMULATION OF REVERSE CURRENT RECOVERY TIME MEASURING DEVISE\",\"authors\":\"V. Kirilov, Ivan Kobeleva, Svetlana Schemerov\",\"doi\":\"10.29003/m2470.mmmsec-2021/60-62\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"56 7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m2470.mmmsec-2021/60-62\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m2470.mmmsec-2021/60-62","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文对二极管结构中的反向电流恢复时间进行了仿真。在“NI Multisim”系统中使用内部库提供了最先进的二极管和晶体管模型。结果表明，模拟装置可以测量出微秒级的反向恢复时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SIMULATION OF REVERSE CURRENT RECOVERY TIME MEASURING DEVISE

In this work the simulation of reverse current recovery time in diode structures was performed. Simulation was provided in “NI Multisim” system using internal libraries with models of state-of-art diodes and transistors. It will be shown that simulated device can measure time of reverse recovery in microseconds diapasone.

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Mathematical modeling in materials science of electronic component

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