考虑温度、辐射和老化效应的硅vlsi元件的Tcad和spice建模

Mathematical modeling in materials science of electronic component Pub Date : 2021-10-27 DOI:10.29003/m2487.mmmsec-2021/112-116

K. Petrosyants

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引用次数: 0

摘要

RAD-THERM-AGING版本的TCAD和SPICE模型已经开发用于亚微米和纳米尺寸的BiCMOS VLSI组件，考虑到各种类型的辐射效应，-260°C…+300°C的宽范围温度和长期运行期间的老化。

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TCAD AND SPICE MODELING OF SILICON VLSI ELEMENTS TAKING INTO ACCOUNT FOR TEMPERATURE, RADIATION AND AGING EFFECTS

RAD-THERM-AGING versions of TCAD and SPICE models have been developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account for various types of radiation effects, temperatures in the wide range of -260°C…+300°C and aging during long-term operation.

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Mathematical modeling in materials science of electronic component

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