2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献

Sensor system in SiGe BiCMOS at 245 and 500 GHz for gas spectroscopy 用于气体光谱的245 GHz和500 GHz SiGe BiCMOS传感器系统

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445471

K. Schmalz, J. Borngraber, P. Neumaier, H. Hubers, D. Kissinger

引用次数: 4

60-GHz SiGe BiCMOS dual-conversion down-converter: Schottky diode RF mixer and analog Gilbert IF mixer with microwave quadrature generator 60 ghz SiGe BiCMOS双转换下变频:肖特基二极管射频混频器和模拟吉尔伯特中频混频器与微波正交发生器

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445466

Jen-Chieh Kao, C. Meng, H. Wei, G. Huang

引用次数: 4

Advances in RF foundry technology for wireless and wireline communications 无线和有线通信射频代工技术的进展

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445453

P. Hurwitz, R. Kanawati, K. Moen, E. Preisler, S. Chaudhry, M. Racanelli

引用次数: 9

Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC 针对5G载波聚合RF开关和FEM SOC的高度线性和低于120秒的Ron × Coff 130 nm RF SOI技术

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445454

F. Gianesello, A. Monroy, V. Vialla, E. Canderle, G. Bertrand, M. Buczko, M. Coly, Jeff Nowakowski, N. Revil, L. Rolland, D. Gloria, A. Juge, S. Gachon, J. Aubert, E. Granger

{"title":"Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC","authors":"F. Gianesello, A. Monroy, V. Vialla, E. Canderle, G. Bertrand, M. Buczko, M. Coly, Jeff Nowakowski, N. Revil, L. Rolland, D. Gloria, A. Juge, S. Gachon, J. Aubert, E. Granger","doi":"10.1109/SIRF.2016.7445454","DOIUrl":"https://doi.org/10.1109/SIRF.2016.7445454","url":null,"abstract":"RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, CMOS Silicon-on-insulator (SOI) has emerged over the past few years as the dominant technology for RF switches in RF FEMs for cell phones and WiFi [1]. While current performances available on RF SOI technology are already exceeding what was feasible using GaAs one, new cellular system such as carrier aggregation require even more stringent performances (linearity, power handling, insertion loss, isolation). To address those new requirements, RF SOI technology has to be improved. In this paper, the performances results of the latest generations of RF SOI switch technologies from STMicroelectronics are reviewed and technology elements that contribute to improved performance are discussed. Future improvements are also proposed, paving the way for RF SOI technology able to address 5G RF switches challenges.","PeriodicalId":138697,"journal":{"name":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127894972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

Electrical properties of creep-resistant nanocrystalline gold-vanadium thin films at millimeter-wave frequencies 抗蠕变纳米晶金钒薄膜在毫米波频率下的电学特性

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445457

Jin Li, ZhengAn Yang, M. Hickle, D. Psychogiou, D. Peroulis

{"title":"Electrical properties of creep-resistant nanocrystalline gold-vanadium thin films at millimeter-wave frequencies","authors":"Jin Li, ZhengAn Yang, M. Hickle, D. Psychogiou, D. Peroulis","doi":"10.1109/SIRF.2016.7445457","DOIUrl":"https://doi.org/10.1109/SIRF.2016.7445457","url":null,"abstract":"This paper reports on the mechanical and electrical properties of creep-resistant nanocrystalline gold-vanadium (Au-V) thin films that are employed in electrostatically-actuated microcorrugated diaphragms (MCDs) of frequency-reconfigurable all-silicon cavity filters. Solid solution strengthened Au-V MCDs featuring the lowest stress relaxation to date were built and experimentally tested. In a 3-hour stress relaxation experiment under a 20-μm constant displacement, they exhibited a 6.2% decay and a rate of stress relaxation (at the 3rd hour) that is 9.7×/5.4× lower than that of previously reported Au/Au-V MCDs. Grounded coplanar waveguide transmission lines were built and measured on a quartz substrate in order to experimentally evaluate the electrical properties (sheet resistance: Rs, conductivity: σ, and attenuation factor: α) of the Au-V thin films through DC and RF measurements in the 20-40 GHz band. These were specified as follows for the annealed Au-V (2.2 atomic percent of V) thin films: Rs = 339.10 mΩ/□, σ = 5.9 MS/m, α = 0.327-0.410 dB/mm.","PeriodicalId":138697,"journal":{"name":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114292943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Series power combining: Enabling techniques for Si/SiGe millimeter-wave power amplifiers 串联功率组合:Si/SiGe毫米波功率放大器的使能技术

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445485

J. Buckwalter, S. Daneshgar, J. Jayamon, P. Asbeck

引用次数: 8

BiCMOS silicon photonics platform for fabrication of high-bandwidth electronic-photonic integrated circuits 用于制造高带宽电子光子集成电路的BiCMOS硅光子学平台

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445464

D. Knoll, S. Lischke, A. Awny, M. Kroh, E. Krune, C. Mai, A. Peczek, D. Petousi, S. Simon, K. Voigt, G. Winzer, L. Zimmermann

引用次数: 18

MM-wave radio, a key enabler of 5G communication 毫米波无线电，5G通信的关键推动者

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445445

J. Curtis, Hongyu Zhou, P. Hisayasu, Anirban Sarkar, F. Aryanfar

引用次数: 8

SOI technology pushes the limits of CMOS for RF applications SOI技术推动了CMOS在射频应用中的极限

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445456

J. Raskin

引用次数: 16

Data converters for 100 Gbit/s communication links and beyond 用于100gbit /s及以上通信链路的数据转换器

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI: 10.1109/SIRF.2016.7445481

M. Grozing, Hao Huang, Xuan-Quang Du, M. Berroth

引用次数: 5