抗蠕变纳米晶金钒薄膜在毫米波频率下的电学特性

Jin Li, ZhengAn Yang, M. Hickle, D. Psychogiou, D. Peroulis
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引用次数: 2

摘要

本文报道了用于频率可重构全硅腔滤波器的静电驱动微波纹膜片(mcd)的耐蠕变纳米晶金钒(Au-V)薄膜的力学和电学性能。建立了迄今为止具有最低应力松弛的固溶体强化Au-V mcd并进行了实验测试。在20 μm恒定位移下的3小时应力松弛实验中,它们表现出6.2%的衰减,应力松弛率(在第3小时)比先前报道的Au/Au- v mcd低9.7×/5.4×。在石英衬底上建立了接地共面波导传输线并进行了测量,通过20-40 GHz频段的直流和射频测量,实验评价了Au-V薄膜的电学性能(片电阻Rs、电导率σ、衰减系数α)。经退火后的Au-V (V的原子量为2.2%)薄膜的测量值如下:Rs = 339.10 mΩ/□,σ = 5.9 MS/m, α = 0.327-0.410 dB/mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical properties of creep-resistant nanocrystalline gold-vanadium thin films at millimeter-wave frequencies
This paper reports on the mechanical and electrical properties of creep-resistant nanocrystalline gold-vanadium (Au-V) thin films that are employed in electrostatically-actuated microcorrugated diaphragms (MCDs) of frequency-reconfigurable all-silicon cavity filters. Solid solution strengthened Au-V MCDs featuring the lowest stress relaxation to date were built and experimentally tested. In a 3-hour stress relaxation experiment under a 20-μm constant displacement, they exhibited a 6.2% decay and a rate of stress relaxation (at the 3rd hour) that is 9.7×/5.4× lower than that of previously reported Au/Au-V MCDs. Grounded coplanar waveguide transmission lines were built and measured on a quartz substrate in order to experimentally evaluate the electrical properties (sheet resistance: Rs, conductivity: σ, and attenuation factor: α) of the Au-V thin films through DC and RF measurements in the 20-40 GHz band. These were specified as follows for the annealed Au-V (2.2 atomic percent of V) thin films: Rs = 339.10 mΩ/□, σ = 5.9 MS/m, α = 0.327-0.410 dB/mm.
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