Advances in RF foundry technology for wireless and wireline communications

P. Hurwitz, R. Kanawati, K. Moen, E. Preisler, S. Chaudhry, M. Racanelli
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引用次数: 9

Abstract

Improvements in foundry RF and mm-wave Si offerings over the last several years have allowed it to take market share from III-V processes for TX / RX applications. The increased RF switch content in handsets is now dominated by RF-SOI which also supports LNA and PA integration. SiGe BiCMOS technologies support the 802.11 FEIC and GPS receiver IC products and may be poised to take a larger share of the cellular PA market in the coming years. Higher-speed, high yielding SiGe BiCMOS is enabling new building blocks such as single-chip 60 GHz phased arrays. Here we review recent improvements in key technology figures of merit and integration that are driving the increased use of RF specialty silicon for high performance wireless and wireline communications.
无线和有线通信射频代工技术的进展
在过去几年中,晶圆射频和毫米波硅产品的改进使其能够从TX / RX应用的III-V工艺中获得市场份额。手机中增加的RF开关内容现在由RF- soi主导,它也支持LNA和PA集成。SiGe BiCMOS技术支持802.11 FEIC和GPS接收器IC产品,并可能在未来几年占据蜂窝PA市场的更大份额。更高速度、高产量的SiGe BiCMOS正在实现新的构建模块,如单芯片60 GHz相控阵。在这里,我们回顾了最近在关键技术指标和集成方面的改进,这些改进正在推动RF专用硅在高性能无线和有线通信中的使用增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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