Jin Li, ZhengAn Yang, M. Hickle, D. Psychogiou, D. Peroulis
{"title":"Electrical properties of creep-resistant nanocrystalline gold-vanadium thin films at millimeter-wave frequencies","authors":"Jin Li, ZhengAn Yang, M. Hickle, D. Psychogiou, D. Peroulis","doi":"10.1109/SIRF.2016.7445457","DOIUrl":null,"url":null,"abstract":"This paper reports on the mechanical and electrical properties of creep-resistant nanocrystalline gold-vanadium (Au-V) thin films that are employed in electrostatically-actuated microcorrugated diaphragms (MCDs) of frequency-reconfigurable all-silicon cavity filters. Solid solution strengthened Au-V MCDs featuring the lowest stress relaxation to date were built and experimentally tested. In a 3-hour stress relaxation experiment under a 20-μm constant displacement, they exhibited a 6.2% decay and a rate of stress relaxation (at the 3rd hour) that is 9.7×/5.4× lower than that of previously reported Au/Au-V MCDs. Grounded coplanar waveguide transmission lines were built and measured on a quartz substrate in order to experimentally evaluate the electrical properties (sheet resistance: Rs, conductivity: σ, and attenuation factor: α) of the Au-V thin films through DC and RF measurements in the 20-40 GHz band. These were specified as follows for the annealed Au-V (2.2 atomic percent of V) thin films: Rs = 339.10 mΩ/□, σ = 5.9 MS/m, α = 0.327-0.410 dB/mm.","PeriodicalId":138697,"journal":{"name":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2016.7445457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper reports on the mechanical and electrical properties of creep-resistant nanocrystalline gold-vanadium (Au-V) thin films that are employed in electrostatically-actuated microcorrugated diaphragms (MCDs) of frequency-reconfigurable all-silicon cavity filters. Solid solution strengthened Au-V MCDs featuring the lowest stress relaxation to date were built and experimentally tested. In a 3-hour stress relaxation experiment under a 20-μm constant displacement, they exhibited a 6.2% decay and a rate of stress relaxation (at the 3rd hour) that is 9.7×/5.4× lower than that of previously reported Au/Au-V MCDs. Grounded coplanar waveguide transmission lines were built and measured on a quartz substrate in order to experimentally evaluate the electrical properties (sheet resistance: Rs, conductivity: σ, and attenuation factor: α) of the Au-V thin films through DC and RF measurements in the 20-40 GHz band. These were specified as follows for the annealed Au-V (2.2 atomic percent of V) thin films: Rs = 339.10 mΩ/□, σ = 5.9 MS/m, α = 0.327-0.410 dB/mm.