Sensor system in SiGe BiCMOS at 245 and 500 GHz for gas spectroscopy

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2016-04-04 DOI:10.1109/SIRF.2016.7445471

K. Schmalz, J. Borngraber, P. Neumaier, H. Hubers, D. Kissinger

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引用次数: 4

Abstract

This paper reviews our recent work on transmitter (TX) and receiver (RX) circuits in SiGe BiCMOS technology for gas spectroscopy in the frequency ranges around 245 GHz and 500 GHz. The 245 GHz TX consists of a 122 GHz local oscillator (LO) and a frequency doubler, and the 245 GHz RX consists of a low noise amplifier (LNA), a LO, and an active subharmonic mixer. A 245 GHz TX-array increases significantly the sensitivity of the sensor system. The 500 GHz system includes a TX-array, and a subharmonic RX with a transconductance mixer. The 500 GHz TX contains a frequency quadrupler, and the RX uses a frequency doubler for the LO. The LOs of the RX and the TX are controlled by two external phase-locked loops (PLLs). The reference frequency of the TX-PLL is frequency-modulated. The performance of the sensor system is demonstrated by using a gas absorption cell with dielectric lenses between the TX- and RX-modules, and measuring the 2f high-resolution absorption spectrum (second harmonic detection) of gaseous methanol (CH3OH) and acetonitrile (CH3CN).

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用于气体光谱的245 GHz和500 GHz SiGe BiCMOS传感器系统

本文综述了我们最近在245ghz和500ghz频率范围内用于气体光谱的SiGe BiCMOS技术的发射机(TX)和接收机(RX)电路方面的工作。245ghz的TX由122ghz的本振(LO)和倍频器组成，245ghz的RX由低噪声放大器(LNA)、本振(LO)和有源次谐波混频器组成。245 GHz x射线阵列显著提高了传感器系统的灵敏度。500 GHz系统包括一个tx阵列和一个带跨导混频器的次谐波RX。500 GHz TX包含频率四倍器，RX使用LO倍频器。RX和TX的LOs由两个外部锁相环(pll)控制。txpll的参考频率是调频的。通过在TX-模块和rx -模块之间使用介电透镜的气体吸收池，测量气态甲醇(CH3OH)和乙腈(CH3CN)的2f高分辨率吸收光谱(二次谐波检测)，验证了传感器系统的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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