发布求助
文献互助 智能选刊 最新文献

1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)最新文献

筛选
英文 中文
An effective method for yield enhancement using zonal defect recognition 一种利用区域缺陷识别提高良率的有效方法
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664577
M. Ono, K. Nemoto, M. Ariga
{"title":"An effective method for yield enhancement using zonal defect recognition","authors":"M. Ono, K. Nemoto, M. Ariga","doi":"10.1109/ISSM.1997.664577","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664577","url":null,"abstract":"This paper presents a zonal defect recognition algorithm that can be applied to the problem of automated defect recognition in semiconductor manufacturing, The algorithm uses digital image processing techniques and template matching to achieve a high recognition rate by classifying zonal defects into one of three defect types: clustered defects, gross defects, or repetitive defects. The feasibility of using the algorithm for automated detection was demonstrated experimentally. Application of the algorithm to actual production lines is expected to contribute to rapid yield ramp-up.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"293 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133803676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A defect-situation forecasting technology to optimize future DRAM-redundancy design 一种优化未来dram冗余设计的缺陷状况预测技术
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664589
K. Sakurai, Y. Shimada, K. Yamanishi
{"title":"A defect-situation forecasting technology to optimize future DRAM-redundancy design","authors":"K. Sakurai, Y. Shimada, K. Yamanishi","doi":"10.1109/ISSM.1997.664589","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664589","url":null,"abstract":"A method of forecasting defect situations in future DRAMs manufactured in the same or similar lines is demonstrated The estimated word-line defect situation of a 0.35 micron DRAM almost agreed with the actual data. By calculation with actual 0.5 micron DRAM word-line defect data, we approximated D(x), the function of particle-existing-probability density on a particle diameter x, as a proportion of 1/x/sup 1.5/. The word-line defect counts of a 0.35 micron DRAM were estimated by the product of the approximated D(x) and P/sub k/(x), the possibility function that k-lines of short or open circuits will be made.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114804839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Very short TAT ULSI trial manufacturing line construction 极短的TAT ULSI试验生产线建设
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664610
S. Kato, T. Suzuki, K. Yamazaki, M. Nakamura
{"title":"Very short TAT ULSI trial manufacturing line construction","authors":"S. Kato, T. Suzuki, K. Yamazaki, M. Nakamura","doi":"10.1109/ISSM.1997.664610","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664610","url":null,"abstract":"The LSI manufacturing division manufactures leading-edge trial products to support the semiconductor business of NEC. As LSI design rules are rapidly becoming finer, short turn-around time (TAT) is becoming an important subject in order to create new products as quickly as possible. Under these circumstances, we established a system of improvement based on total productive maintenance (TPM) to achieve 100% customer satisfaction, with priority on very short TAT and success on the first run.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123513924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of an in situ moisture sensor to improve utilization and performance of a rapid thermal processor 一种原位湿度传感器的实现，以提高快速热处理器的利用率和性能
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664505
A. Haider, J. Brookshire, Y.R. Kuan, J. Mcandrew, R. Inman
{"title":"Implementation of an in situ moisture sensor to improve utilization and performance of a rapid thermal processor","authors":"A. Haider, J. Brookshire, Y.R. Kuan, J. Mcandrew, R. Inman","doi":"10.1109/ISSM.1997.664505","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664505","url":null,"abstract":"A novel in situ moisture sensor based on tunable diode laser spectroscopy has been used to monitor water vapor during titanium silicide formation and annealing. The relationship between water vapor level and sheet resistivity in titanium silicide formation was discussed in another recent publication. In this paper we show that the sensor is useful in optimizing purge procedures and also as a safeguard against accidental ambient contamination and similar incidents. It can be anticipated that the sensor output will eventually be fed back to the tool in order to be used directly in control of purging and other process steps.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127138229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Eliminating polymer flake defects using an oxygen free chemistry 使用无氧化学消除聚合物片状缺陷
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664632
H. Chang, C. Wilson, J. Jackson
{"title":"Eliminating polymer flake defects using an oxygen free chemistry","authors":"H. Chang, C. Wilson, J. Jackson","doi":"10.1109/ISSM.1997.664632","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664632","url":null,"abstract":"Catastrophic defect excursions existed in a plasma etch process due to polymer flaking. Several possible fixes such as an in-situ particle check and a Cl/sub 2/ plasma clean were investigated without effectively eliminating this yield limiting defect. This paper will describe how an oxygen free chemistry was adopted to eliminate the polymer flake defect. This process change eliminated polymer flake excursions, improved factory line yield by more than 1% and increased etcher availability by 15%.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123235589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling and filtering of optical emission spectroscopy data for plasma etching systems 等离子体蚀刻系统发射光谱数据的建模与滤波
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664507
S. Rangan, C. Spanos, K. Poolla
{"title":"Modeling and filtering of optical emission spectroscopy data for plasma etching systems","authors":"S. Rangan, C. Spanos, K. Poolla","doi":"10.1109/ISSM.1997.664507","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664507","url":null,"abstract":"Full-spectrum in situ optical emission spectroscopy (OES) has emerged as a promising technology for in-line sensor systems for plasma etching process control. In this paper, we present a novel empirical model-based approach for OES data filtering based on statistical principal component analysis and jump linear filtering. The modeling procedure is demonstrated on a commercial multilayer Al/TiN/SiO/sub 2/ etch process. For this process, we show that the proposed model provides a succinct representation of the OES signals and is in excellent agreement with the experimental data.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126237105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
In-line defect detection metrology tool matching 在线缺陷检测计量工具匹配
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664511
B. Funsten, A. Ogawa, D. Lui
{"title":"In-line defect detection metrology tool matching","authors":"B. Funsten, A. Ogawa, D. Lui","doi":"10.1109/ISSM.1997.664511","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664511","url":null,"abstract":"This paper is a case study of our experience matching five darkfield defect detection tools (Inspex model 8530) used for both patterned and unpatterned wafers, in a 0.25 um and beyond development/production facility, producing both logic and memory technologies. Two of the systems were new tools and three were existing tools upgraded to identical capability. In this implementation, sensitivity, count reproducibility, defect position reproducibility, throughput, and recipe transfer from tool to tool were of major concern. This study discusses the degree of tool matching obtained as well as the lessons learned from the project approach and methodology.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126513098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Real time dispatch gets real time results 实时调度得到实时结果
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664605
K. Appleton-Day, L. Shao
{"title":"Real time dispatch gets real time results","authors":"K. Appleton-Day, L. Shao","doi":"10.1109/ISSM.1997.664605","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664605","url":null,"abstract":"Since the on-line dispatch system is the primary method of prioritizing and directing the flow of work through a paperless fab, it makes sense that we place high demands on a dispatching tool. The demands were met by ASI's RTD system. The flexibility and customizability that RTD offers allows us to execute dispatch logic using real-time factory systems data. We can apply unique rules to accommodate unique tool requirements. With constantly evolving computer technology, we believe dispatching holds promising implications for the continuous improvement of wafer fabrication performance.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121721370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A new economical wafer drying technology with high process performance 一种经济、高工艺性能的干燥新技术
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664555
K. Asada, H. Iwamoto, T. Hashiguchi, Y. Okamoto, T. Minami, K. Ueno, S. Kitahara
{"title":"A new economical wafer drying technology with high process performance","authors":"K. Asada, H. Iwamoto, T. Hashiguchi, Y. Okamoto, T. Minami, K. Ueno, S. Kitahara","doi":"10.1109/ISSM.1997.664555","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664555","url":null,"abstract":"Requirements for a Si wafer cleaning and drying technology with better performance and better cost efficiency, as well as less environmental pollution are on the increase, as the wafer diameter becomes larger and the pattern design rule becomes as small as 0.25 /spl mu/m and below. The conventional IPA vapor dryers are widely used for wafer drying today, however, this method requires a large amount of IPA. Here, we report a new drying method (Stacked Dual Chamber Dry) using a small amount of IPA vapor in inert gas. It was found that the new drying method consumes one-fourth of the IPA with conventional drying and processing time is significantly shortened.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114600192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of a constraint based production line management system for semiconductor manufacturing 基于约束的半导体制造生产线管理系统的应用
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI: 10.1109/ISSM.1997.664490
R. Babikian, M. Sanders
{"title":"Application of a constraint based production line management system for semiconductor manufacturing","authors":"R. Babikian, M. Sanders","doi":"10.1109/ISSM.1997.664490","DOIUrl":"https://doi.org/10.1109/ISSM.1997.664490","url":null,"abstract":"One of the key components of the theory of constraints is the application of the \"drum-buffer-rope\" principle to production line management. This involves linking the start of material into the production line with the performance of the constraint. The methodology presented in this paper uses an inventory profile system (IFS) automation tool to track the factory inventory and performance of constraint and near constraint equipment. This equipment is monitored using control charts of the inventory. A wafer start modulation algorithm computes the over or under inventory in wafers and the recovery time which are used in the starts decision making process.","PeriodicalId":138267,"journal":{"name":"1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115850322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信