使用无氧化学消除聚合物片状缺陷

1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) Pub Date : 1997-10-06 DOI:10.1109/ISSM.1997.664632

H. Chang, C. Wilson, J. Jackson

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引用次数: 3

摘要

在等离子体蚀刻过程中，由于聚合物剥落而产生了灾难性的缺陷漂移。研究了几种可能的修复方法，如原位颗粒检查和Cl/sub - 2/等离子体清洁，但没有有效消除这一限制成品率的缺陷。本文将介绍如何采用无氧化学方法消除聚合物片状缺陷。这一工艺变化消除了聚合物薄片漂移，提高了工厂生产线产量1%以上，并增加了15%的蚀刻剂可用性。

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Eliminating polymer flake defects using an oxygen free chemistry

Catastrophic defect excursions existed in a plasma etch process due to polymer flaking. Several possible fixes such as an in-situ particle check and a Cl/sub 2/ plasma clean were investigated without effectively eliminating this yield limiting defect. This paper will describe how an oxygen free chemistry was adopted to eliminate the polymer flake defect. This process change eliminated polymer flake excursions, improved factory line yield by more than 1% and increased etcher availability by 15%.

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来源期刊

1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023)

CiteScore

0.80

自引率

0.00%

发文量