2013 IEEE International Reliability Physics Symposium (IRPS)最新文献_第10页

ESD in FinFET technologies: Past learning and emerging challenges ESD在FinFET技术:过去的学习和新出现的挑战

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531950

D. Linten, G. Hellings, Shih-Hung Chen, G. Groeseneken

{"title":"ESD in FinFET technologies: Past learning and emerging challenges","authors":"D. Linten, G. Hellings, Shih-Hung Chen, G. Groeseneken","doi":"10.1109/IRPS.2013.6531950","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531950","url":null,"abstract":"FinFET technologies were seen as a potential roadblock for providing high ESD reliable ICs due to the 3D nature of the narrow Si fins which do not allow a large current conduction before thermal failure. However, a detailed assessment of common ESD structures such as diodes and grounded gate devices, has shown that ESD reliability is not a roadblock for finFET-based products. Studying both SOI and bulk FinFETs, bulk FinFET was found to provide superior ESD performance due to the fin connection to the substrate. Focusing on sub-20-nm bulk FinFET technologies, emerging challenges are not limited to dealing with the smaller silicon volume of the fins and finer pitch, but also with the introduction of high mobility channels in the fins. The introduction of these materials can have a profound impact on the intrinsic ESD performance and must therefore be studied. In this work we will present past learning on ESD protection devices in FinFET technologies, for SOI and bulk FinFETs, TCAD methods used to analyze the ESD results, and we will present the results for non-silicon FinFET technologies which are being considered for the 14 and 10-nm CMOS nodes.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116854951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Estimation of hardened flip-flop neutron soft error rates using SRAM multiple-cell upset data in bulk CMOS 基于块体CMOS中SRAM多单元扰动数据的硬化触发器中子软错误率估计

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532113

N. Gaspard, S. Jagannathan, Z. Diggins, M. Mccurdy, T. D. Loveless, B. Bhuva, L. Massengill, W. T. Holman, T. Oates, Y. Fang, S. Wen, R. Wong, K. Lilja, M. Bounasser

引用次数: 25

TOF-SIMS characterization of Boron and phosphorus distribution in sub-atmospheric chemical vapour deposition borophosphosilicate glass (SA-CVD BPSG) films 亚大气化学气相沉积硼磷硅酸盐玻璃(SA-CVD BPSG)薄膜中硼磷分布的TOF-SIMS表征

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532026

E. Ferlito, G. Pizzo, R. de Gregorio, G. Anastasi, R. Ricciari, D. Mello

引用次数: 1

Reliability characteristics of thin porous low-K silica-based interconnect dielectrics 薄多孔低钾硅基互连介质的可靠性特性

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531968

Y. Barbarin, K. Croes, P. Roussel, Y. Li, P. Verdonck, M. Baklanov, Z. Tokei, L. Zhao

{"title":"Reliability characteristics of thin porous low-K silica-based interconnect dielectrics","authors":"Y. Barbarin, K. Croes, P. Roussel, Y. Li, P. Verdonck, M. Baklanov, Z. Tokei, L. Zhao","doi":"10.1109/IRPS.2013.6531968","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531968","url":null,"abstract":"The dielectric breakdown field (EBD) and the time-dependent-dielectric-breakdown (TDDB) of eight different low-K films with porosities between 3% (K=3.2) and 50% (K=1.8) and thicknesses between 15 and 60 nm were investigated using imec's planar capacitors (p-cap) test vehicle. EBD values decrease linearly with porosity to reach 6MV/cm at 50% porosity. The analogous Organo-Silicate Glass (OSG) films show a similar field acceleration factors independently of porosity. An OSG 2.0 film with 45% porosity and a periodic mesoporous organosilica (PMO) 1.8 film, both sealed with 12-nm OSG 3.0 sealing also showed the same field acceleration factor. On the other hand, the corresponding Weibull slopes vary and decrease linearly with porosity, which is in agreement with the percolation model. Also, the Weibull slopes decrease linearly with dielectric thickness. Extrapolating those data and analyzing the maximum allowed electrical fields to meet 10-years lifetime (EMAX), critical dielectric spacing are discussed as a function of porosity. It is shown that for 20-nm spacing remedial measures are required for porosities >30%.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125739632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Space radiation and reliability qualifications on 65nm CMOS 600MHz microprocessors 65nm CMOS 600MHz微处理器的空间辐射和可靠性鉴定

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532051

S. Clerc, F. Abouzeid, G. Gasiot, J. Daveau, C. Bottoni, M. Glorieux, J. Autran, F. Cacho, V. Huard, L. Dugoujon, R. Weigand, F. Malou, L. Hili, P. Roche

引用次数: 9

Experimental analyses of the mechanical reliability of advanced BEOL/fBEOL stacks regarding CPI loading 新型BEOL/fBEOL叠层在CPI载荷下的机械可靠性实验分析

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532030

H. Geisler, E. Schuchardt, M. Brueckner, P. Hofmann, K. Machani, F. Kuechenmeister, D. Breuer, H. Engelmann

引用次数: 12

Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM 基于hfo2的RRAM在高、低电阻状态下耐力退化的统计评估

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532093

S. Deora, G. Bersuker, M. Sung, D. Gilmer, P. Kirsch, H.-F Li, H. Chong, S. Gausepohl

引用次数: 11

Effects of positive and negative constant voltage stress on organic TFTs 正负恒压应力对有机tft的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532123

N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kováč, J. Jakabovic, M. Weis, D. Donoval

引用次数: 6

Accelerated stress testing methodology to risk assess silicon-package thermomechanical failure modes resulting from moisture exposure under use condition 用于评估在使用条件下因受潮而导致的硅封装热机械失效模式风险的加速应力测试方法

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532032

S. Rangaraj, Daeil Kwon, M. Pei, J. Hicks, G. Leatherman, A. Lucero, T. Wilson, S. Streit, Jun He

{"title":"Accelerated stress testing methodology to risk assess silicon-package thermomechanical failure modes resulting from moisture exposure under use condition","authors":"S. Rangaraj, Daeil Kwon, M. Pei, J. Hicks, G. Leatherman, A. Lucero, T. Wilson, S. Streit, Jun He","doi":"10.1109/IRPS.2013.6532032","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532032","url":null,"abstract":"IC components are exposed to moisture and thermal cycles during chip-package-board assembly and in their end use conditions. Moisture exposure influences the mechanical integrity of silicon backend dielectrics, assembly/packaging materials and packages. Reliability performance under accelerated stresses that simulate use conditions are often a critical factor in choice of materials, processing options and design rules. A complete assessment of the cumulative environmental exposure from chip-package assembly, shipment/storage, board system assembly, through end-customer use is required to guarantee product performance and reliability. This paper will detail these end user environments and use failure mode/mechanism specific acceleration models to develop accurate accelerated life testing plans and requirements. These requirements will then be compared to JEDEC standards based requirements and a need for re-calibration of these standards to more appropriate temperatures and stress durations will be highlighted.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132738888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

ESD protection design with adjustable snapback behavior for 5-V application in 100nm CMOS process ESD保护设计，具有可调的回吸行为，适用于100nm CMOS工艺中的5v应用

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532072

Chang-Tzu Wang, Yu-Chun Chen, Tien-Hao Tang, K. Su

引用次数: 1