2013 IEEE International Reliability Physics Symposium (IRPS)最新文献_第10页

GaN-HEMTs devices with single- and double-heterostructure for power switching applications 用于功率开关应用的单双异质gan - hemt器件

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531983

G. Meneghesso, A. Zanandrea, A. Stocco, I. Rossetto, C. de Santi, F. Rampazzo, M. Meneghini, E. Zanoni, Eldad Bahat Treidel, O. Hilt, P. Ivo, J. Wuerfl

引用次数: 8

Electromigration early failure void nucleation and growth phenomena in Cu and Cu(Mn) interconnects Cu和Cu(Mn)互连中电迁移早期失效空穴成核和生长现象

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531951

M. Hauschildt, C. Hennesthal, G. Talut, O. Aubel, M. Gall, K. Yeap, E. Zschech

{"title":"Electromigration early failure void nucleation and growth phenomena in Cu and Cu(Mn) interconnects","authors":"M. Hauschildt, C. Hennesthal, G. Talut, O. Aubel, M. Gall, K. Yeap, E. Zschech","doi":"10.1109/IRPS.2013.6531951","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531951","url":null,"abstract":"Electromigration early failure void nucleation and growth phenomena were studied using large-scale, statistical analysis methods. A total of about 496,000 interconnects were tested over a wide current density and temperature range (j = 3.4 to 41.2 mA/μm2, T = 200 to 350°C) to analyze the detailed behavior of the current density exponent n and the activation energy Ea. The results for the critical V1M1 downstream interface indicate a reduction from n = 1.55±0.10 to n = 1.15±0.15 when lowering the temperature towards 200°C for Cu-based interconnects. This suggests that the electromigration downstream early failure mechanism is shifting from a mix of nucleation-controlled (n = 2) and growth-controlled (n = 1) to a fully growth-controlled mode, assisted by the increased thermal stress at lower temperatures (especially at use conditions). For Cu(Mn)-based interconnects, a drop from n = 2.00±0.07 to n = 1.64±0.2 was found, indicating additional effects of a superimposed incubation time. Furthermore, at lower current densities, the Ea value seems to drop for both Cu and Cu(Mn) interconnects by a slight, but significant amount of 0.1 - 0.2eV. Implications for extrapolations of accelerated test data to use conditions are discussed. Furthermore, the scaling behavior of the early failure population at the NSD=-3 level (F~0.1%) was analyzed, spanning 90, 65, 45, 40 and 28 nm technology nodes.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"2018 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117007211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 48

An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures 铜/低k片上互连结构中随时间变化的介电击穿机制的原位观察实验方法

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531966

K. Yeap, M. Gall, C. Sander, S. Niese, Z. Liao, Y. Ritz, R. Rosenkranz, U. Muhle, J. Gluch, E. Zschech, O. Aubel, A. Beyer, C. Hennesthal, M. Hauschildt, G. Talut, J. Poppe, N. Vogel, H. Engelmann, D. Stauffer, R. Major, O. Warren

{"title":"An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures","authors":"K. Yeap, M. Gall, C. Sander, S. Niese, Z. Liao, Y. Ritz, R. Rosenkranz, U. Muhle, J. Gluch, E. Zschech, O. Aubel, A. Beyer, C. Hennesthal, M. Hauschildt, G. Talut, J. Poppe, N. Vogel, H. Engelmann, D. Stauffer, R. Major, O. Warren","doi":"10.1109/IRPS.2013.6531966","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531966","url":null,"abstract":"This study captures the time-dependent dielectric breakdown kinetics in nanoscale Cu/low-k interconnect structures, applying in-situ transmission electron microscopy (TEM) imaging and post-mortem electron spectroscopic imaging (ESI). A “tip-to-tip” test structure and an experimental methodology were established to observe the localized damage mechanisms under a constant voltage stress as a function of time. In an interconnect structure with partly breached barriers, in-situ TEM imaging shows Cu nanoparticle formation, agglomeration and movement in porous organosilicate glasses. In a flawless interconnect structure, in-situ TEM imaging and ESI mapping show close to no evidence of Cu diffusion in the TDDB process. From the ESI mapping, only a narrow Cu trace is found at the SiCN/OSG interface. In both cases, when barriers are breached or still intact, the initial damage is observed at the top interface of M1 between SiCN and OSG.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117050761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Self-heat reliability considerations on Intel's 22nm Tri-Gate technology 对英特尔22nm三栅极技术的自热可靠性考虑

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532036

C. Prasad, L. Jiang, D. Singh, M. Agostinelli, C. Auth, P. Bai, T. Eiles, J. Hicks, C. Jan, K. Mistry, S. Natarajan, B. Niu, P. Packan, D. Pantuso, I. Post, S. Ramey, A. Schmitz, B. Sell, S. Suthram, J. Thomas, C. Tsai, P. Vandervoorn

引用次数: 98

Impact of cell distance and well-contact density on neutron-induced Multiple Cell Upsets 细胞距离和孔接触密度对中子诱导的多细胞扰动的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1587/TRANSELE.E98.C.298

J. Furuta, Kazutoshi Kobayashi, H. Onodera

引用次数: 29

Short line electromigration characteristics and their applications for circuit design 短线电迁移特性及其在电路设计中的应用

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532000

Baozhen Li, C. Christiansen, C. Burke, N. Hogle, D. Badami

引用次数: 9

Electromigration extrusion kinetics of Cu interconnects 铜互连的电迁移挤出动力学

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531954

Lijuan Zhang, Ping-Chuan Wang, Xiao Hu Liu, P. McLaughlin, R. Filippi, Baozhen Li, J. Bao

引用次数: 1

Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process 一种高性能体平面20nm替代栅高k金属栅技术的固有介电堆可靠性及与28nm栅首高k金属栅工艺的比较

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532016

W. McMahon, C. Tian, S. Uppal, H. Kothari, M. Jin, G. Larosa, T. Nigam, A. Kerber, B. Linder, E. Cartier, W. Lai, Y. Liu, R. Ramachandran, U. Kwon, B. Parameshwaran, S. Krishnan, V. Narayanan

引用次数: 13

Evaluation of constant voltage testing for electromigration study 恒压试验对电迁移研究的评价

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532078

Z. Zhang, B. McGowan, Z. Feldmaier, J. Lloyd, T. McMullen, E. Wilcox, S. Schultz

引用次数: 3

A junction leakage mechanism and its effects on advance SRAM failure 结漏机制及其对SRAM提前失效的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531994

D. Maji, P. Liao, Y. Lee, J. Shih, S. C. Chen, S. Gao, J. H. Lee, K. Wu

{"title":"A junction leakage mechanism and its effects on advance SRAM failure","authors":"D. Maji, P. Liao, Y. Lee, J. Shih, S. C. Chen, S. Gao, J. H. Lee, K. Wu","doi":"10.1109/IRPS.2013.6531994","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531994","url":null,"abstract":"Junction leakage is becoming an important reliability concern as shallow trench isolation (STI) continues to scale down. This junction leakage has to be considered to improve SRAM Vccmin degradation. The major index of junction leakage in SRAM cell is found to be off-state leakage current as the leakage phenomenon externally manifests as a current flow from butted contact (BCT) to lower pull down (LPD) transistor gate. Isolation test patterns (P+/N-well to P-Well) with well photo misalignments are designed to verify Si/STI interface damage effect on junction leakage. Process experiment with PW misalignment shows isolation leakage current (P+ to PW) increase after electrical stress. However, this type of leakage due to PW misalignment shows weak temperature and voltage dependence, indicating that the trap-assisted carrier hopping at STI Si/SiO2 interface and the PW misalignment are paramount of SRAM junction reliability. Using TCAD simulation, we have verified that carriers transport through the Si/STI interface traps along with poor PW misalignment is the root causes of the junction leakage current increase. HSPICE simulation results show that junction leakage worsen SRAM cell stability by degrading SRAM read margin (SNM) and may eventually lead to cell failure.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115890784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6